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参数资料
| 型号： | MAT-03AH |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 10/12页 |
| 文件大小： | 254K |
| 代理商： | MAT-03AH |
MAT03
–7–
REV. B
to bias each side of the differential pair. The 5 k
collector re-
sistors noise contribution is insignificant compared to the volt-
age noise of the MAT03. Since noise in the signal path is
referred back to the input, this voltage noise is attenuated by the
gain of the circuit. Consequently, the noise contribution of the
collector load resistors is only 0.048 nV/
√Hz. This is consider-
ably less than the typical 0.8 nV/
√Hz input noise voltage of the
MAT03 transistor.
The noise contribution of the OP27 gain stages is also negligible
due to the gain in the signal path. The op amp stages amplify
the input referred noise of the transistors to increase the signal
strength to allow the noise spectral density (ein × 10000) to be
measured with a spectrum analyzer. And, since we assume
equal noise contributions from each transistor in the MAT03,
the output is divided by
√2 to determine a single transistor’s
input noise.
Air currents cause small temperature changes that can appear
as low frequency noise. To eliminate this noise source, the
measurement circuit must be thermally isolated. Effects of extrane-
ous noise sources must also be eliminated by totally shielding
the circuit.
SUPER LOW NOISE AMPLIFIER
The circuit in Figure 14a is a super low noise amplifier with
equivalent input voltage noise of 0.32 nV/
√Hz. By paralleling
three MAT03 matched pairs, a further reduction of amplifier
noise is attained by a reduction of the base spreading resistance
by a factor of 3, and consequently the noise by
√3. Additionally,
the shot noise contribution is reduced by maintaining a high col-
lector current (2 mA/device) which reduces the dynamic emitter
resistance and decreases voltage noise. The voltage noise is in-
versely proportional to the square root of the stage current, and
current noise increases proportionally to the square root of the
stage current. Accordingly, this amplifier capitalizes on voltage
noise reduction techniques at the expense of increasing the cur-
rent noise. However, high current noise is not usually important
when dealing with low impedance sources.
Figure 14a. Super Low Noise Amplifier
相关PDF资料 |
PDF描述 |
|---|---|
| MAT03AH/883 | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-04NBC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NBCG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NACG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NAC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT03AH/883C | 制造商:Rochester Electronics LLC 功能描述:HI-SPEED DUAL PNP TRANS-L - Bulk |
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03FH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
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