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| 型号： | MAT03-903H |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | CAN PACKAGE-6 |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | MAT03-903H |
Tuesday, Feb 26, 2008 3:48 PM /
Low noise, matched,
dual PNP transistor
MAT03
ASD0011414
Rev. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its use,
nor for any infringements of patents or other rights of third parties that may
result from its use. Specifications subject to change without notice. No license
is granted by implication or otherwise under any patent or patent rights of
Analog Devices. Trademarks and registered trademarks are the property of
their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106,
U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703 2008 Analog Devices, Inc. All rights reserved.
1.0
SCOPE
This specification documents the detail requirements for space qualified product manufactured on
Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
The manufacturing flow described in the STANDARD SPACE LEVEL PRODUCTS PROGRAM
brochure is to be considered a part of this specification. http://www.analog.com/aerospace
This data sheet specifically details the space grade version of this product. A more detailed
operational description and a complete datasheet for commercial product grades can be found at
www.analog.com/MAT03
2.0
Part Number. The complete part number(s) of this specification follow:
Part Number
Description
MAT03-903H
Low noise, matched, dual PNP transistor
MAT03-903L
Low noise, matched, dual PNP transistor
MAT03-913H
Radiation Tested, Low noise, matched, dual PNP transistor
MAT03-913L
Radiation Tested, Low noise, matched, dual PNP transistor
2.1
Case Outline.
Letter Descriptive designator Case Outline (Lead Finish per MIL-PRF-38535)
H
MACY1-X6
6-Lead can package (TO)
L
GDFP1-F10
10-Lead ceramic flatpack (cerpak)
Figure 1 - Terminal connections.
3.0
Absolute Maximum Ratings. (TA = 25°C, unless otherwise noted)
Collector to base voltage (BVCBO)..................................................................................36V
Collector to emitter voltage (BVCEO)..............................................................................36V
Collector to collector voltage (BVCC).............................................................................36V
Emitter to emitter voltage (BVEE)...................................................................................36V
Collector current (IC)....................................................................................................20mA
Emitter current (IE).......................................................................................................20mA
Total power dissipation 1/........................................................................................500mW
Operating ambient temperature range.............................................................-55 to +125°C
Operating junction temperature range ....................................................... -55°C to +125°C
Storage temperature range ......................................................................... -65°C to +150°C
Lead temperature (soldering, 60 sec)........................................................................ +300°C
Dice junction temperature range................................................................ -65°C to +150°C
1/ Rating applies to applications not using heat sinking, device is free air only.
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相关代理商/技术参数 |
参数描述 |
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| MAT03AH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03AH/883C | 制造商:Rochester Electronics LLC 功能描述:HI-SPEED DUAL PNP TRANS-L - Bulk |
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
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