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参数资料
| 型号： | MAUPS120E3 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封装： | ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 526K |
| 代理商： | MAUPS120E3 |
UPS120e3
1.0 A Schottky Barrier Rectifier
DESCRIPTION
The Microsemi UPS120e3 Powermite
Schottky rectifier is RoHS
compliant and offers low forward voltage characteristics with reverse
blocking capabilities up to 20 Volt. They are ideal for surface mount
applications that operate at high frequencies.
In addition to its size advantages, Powermite
package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly, and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
RMS Reverse Voltage
V R (RMS)
14
V
Average Rectified Output Current (at rated
VR, TC =135C)
Io
1.0
A
Peak Repetitive Forward Current (at rated VR,
square wave, 100kHz, TC=135C)
IFRM
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave
IFSM
50
A
Voltage Rate of Change (rated VR, TJ =25C)
dv/dt
10,000
V/s
Storage Temperature
TSTG
-55 to +150
C
Junction Temperature
TJ
-55 to +125
C
DO-216
See further details and dimensions on last page
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to-case (bottom)
RθJC
15
C/ Watt
Junction-to-ambient (1)
RθJA
240
C/ Watt
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print
KEY FEATUR ES
Low thermal resistance DO-216AA package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX, or
MV prefixes respectively to part numbers.
For example, designate MXUPS120e3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Small 8.45 mm
2 foot print
(See mounting pad details next page)
MECHANICAL & PACKAGING
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
POLARITY: See figure (left)
MARKING: S20
WEIGHT: 0.016 grams (approx.)
Package dimension on last page
Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
WWW
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Microsemi
Copyright
2007
6-26-2007 Rev C
Page 1
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