- 您现在的位置：买卖IC网 > PDF目录20715 > MAX15008ATJ+T (Maxim Integrated)IC REG LDO 5V/ADJ .3A 32TQFN-EP PDF资料下载
参数资料
| 型号： | MAX15008ATJ+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 19/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V/ADJ .3A 32TQFN-EP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式或可调式 |
| 输出电压： | 5V，1.8 V ~ 11 V |
| 输入电压： | 5 V ~ 40 V |
| 电压 - 压降（标准）： | 0.775V @ 300mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 300mA（最小） |
| 电流 - 限制（最小）： | 330mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 供应商设备封装： | 32-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
Automotive 300mA LDO Voltage Regulators
with Tracker Output and Overvoltage Protector
Calculate the discharge time, t 1 , using the following
equation:
where Δ V SOURCE = (V OV x 0.04) + Δ V 2 in volts, and
C rss is the MOSFET’s reverse transfer capacitance in
t 1 = C SOURCE ×
0.04 × V OV
I LOAD + I GATEPD
pF. Any external capacitance between GATE and
PGND adds up to C rss .
Power Dissipation/Junction Temperature
where t 1 is in ms, V OV is the adjusted overvoltage
threshold in volts, I LOAD is the external load current in
mA, and I GATEPD is the 63mA (typ) internal pulldown
current of GATE. C SOURCE is the value of the capacitor
connected between the source of the MOSFET and
PGND in μF.
GATE Delay Time (t 2 )
When SOURCE falls 4% below the overvoltage threshold
voltage, the internal current sink is disabled and the
internal charge pump begins recharging the external
GATE voltage. Due to the external load, the SOURCE
voltage continues to drop until the gate of the MOSFET is
recharged. The time needed to recharge GATE and re-
enhance the external MOSFET is approximately:
During normal operation, the MAX15008/MAX15010
has two main sources of internal power dissipation: the
LDO and the voltage tracker.
Calculate the power dissipation due to the LDO as:
P LDO = (V IN - V OUT_LDO ) x I OUT_LDO
where V IN is the LDO input supply voltage in volts,
V OUT_LDO is the output voltage of the LDO in volts, and
I OUT_LDO is the LDO total load current in mA.
Calculate power dissipation due to the tracker as:
P TRK = (V TRACK - V OUT_TRK ) x I OUT_TRK
where V TRACK is the tracker input supply voltage in
volts, V OUT_TRK is the output voltage of the tracker in
volts, and I OUT_TRK is the tracker load current in mA.
t 2 = C iss ×
V GS ( TH ) + V F
I GATE
The total power dissipation P DISS in mW as:
P DISS = P LDO + P TRK
For prolonged exposure to overvoltage events, use the
Δ V 2 = LOAD
where t 2 is in μs, C iss is the input capacitance of the
MOSFET in pF, and V GS(TH) is the gate-to-source thresh-
old voltage of the MOSFET in volts. V F is the 0.7V (typ)
internal clamp diode forward voltage of the MOSFET in
volts, and I GATE is the charge-pump current 45μA (typ).
Any external capacitance between GATE and PGND will
add up to C iss .
During t 2 , the SOURCE capacitance, C SOURCE , loses
charge through the output load. The voltage across
C SOURCE decreases by Δ V 2 until the MOSFET reaches
its V GS(TH) threshold. Approximate Δ V 2 using the fol-
lowing formula:
I × t 2
C SOURCE
SOURCE Output Charge Time (t 3 )
Once the GATE voltage exceeds the gate-to-source thresh-
old, V GS(TH) , of the external MOSFET, the MOSFET turns
on and the charge through the internal charge pump with
respect to the drain potential, Q G , determines the slope of
the output-voltage rise. The time required for the SOURCE
voltage to rise again to the overvoltage threshold is:
V IN and V TRACK voltages expected during overvoltage
conditions. Under these circumstances the corre-
sponding internal power dissipation contribution, P OVP ,
calculated in the Overvoltage-Limiter Mode Switching
Frequency section should also be included in the total
power dissipation, P DISS .
For a given ambient temperature, T A , calculate the
junction temperature, T J , as follows:
T J = T A + P DISS x θ JA
where T J and T A are in °C and θ JA is the junction-to-
ambient thermal resistance in °C/W as listed in the
Absolute Maximum Ratings section.
The junction temperature should never exceed +150°C
during normal operation.
Thermal Protection
When the junction temperature exceeds T J = +160°C,
the MAX15008/MAX15010 shut down to allow the
device to cool. When the junction temperature drops to
+140°C, the thermal sensor turns all enabled blocks
on again, resulting in a cycled output during continu-
ous thermal-overload conditions. Thermal protection
protects the MAX15008/MAX15010 from excessive
power dissipation. For continuous operation, do not
t 3 =
C rss × Δ V SOURCE
I GATE
exceed the absolute maximum junction temperature
rating of +150°C.
______________________________________________________________________________________
19
相关PDF资料 |
PDF描述 |
|---|---|
| MAX15009ATJ+T | IC REG LDO 5V/ADJ .3A 32TQFN-EP |
| GCM08DCTS | CONN EDGECARD 16POS DIP .156 SLD |
| AISM-1210-R33M-T | INDUCTOR .33UH 20% 1210 |
| RSC50DRTN | CONN EDGECARD 100PS DIP .100 SLD |
| MAX8887EZK28+T | IC REG LDO 2.8V .3A TSOT23-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15008EVKIT+ | 功能描述:电源管理IC开发工具 MAX15008 Eval Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX15009ATJ+ | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX15009ATJ+T | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX15009ATN+ | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX15009ATN+T | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
发布紧急采购，3分钟左右您将得到回复。