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| 型号： | MAX15011ATJ+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 19/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V/ADJ .3A 32TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 稳压器拓扑结构： | 正，固定式或可调式 |
| 输出电压： | 5V，1.8 V ~ 11 V |
| 输入电压： | 5 V ~ 40 V |
| 电压 - 压降（标准）： | 0.8V @ 300mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 300mA（最小） |
| 电流 - 限制（最小）： | 330mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 供应商设备封装： | 32-TQFN-EP（5x5） |
| 包装： | 管件 |
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
where V SOURCE = (V OV x 0.04) + V 2 in volts, and C rss
is the MOSFET’s reverse transfer capacitance in pF.
Any external capacitance between GATE and PGND
adds up to C rss .
Power Dissipation/Junction Temperature
During normal operation, the MAX15009/MAX15011
have two main sources of internal power dissipation:
the LDO and the switched output.
The internal power dissipation due to the LDO can be
calculated as:
P LDO = (V IN ? V OUT_LDO ) × (I OUT_LDO + I OUT_SW )
where V IN is the LDO input supply voltage in volts,
V OUT_LDO is the output voltage of the LDO in volts,
I OUT_LDO is the LDO total load current in mA, and
I OUT_SW is the switch load current in mA.
Calculate the power dissipation due to the switch as:
P SW = Δ V SW × I OUT _ SW
where Δ V SW is the switch dropout voltage in volts for
the given I OUT_SW current in mA.
The total power dissipation P DISS in mW as:
P DISS = P LDO + P SW
For prolonged exposure to overvoltage events, use the
V IN voltage expected during overvoltage conditions.
Under these circumstances the corresponding internal
power dissipation contribution, P OVP , calculated in the
previous section should also be included in the total
power dissipation, P DISS .
For a given ambient temperature, T A , calculate the
junction temperature, T J , as follows:
T J = T A + P DISS x θ JA
where T J and T A are in °C and θ JA is the junction-to-
ambient thermal resistance in °C/W as listed in the
Absolute Maximum Ratings section.
The junction temperature should never exceed +150°C
during normal operation.
Thermal Protection
When the junction temperature exceeds T J = +160°C,
the MAX15009/MAX15011 shut down to allow the
device to cool. When the junction temperature drops to
+140°C, the thermal sensor turns all enabled blocks on
again, resulting in a cycled output during continuous
thermal-overload conditions. Thermal protection pro-
tects the MAX15009/MAX15011 from excessive power
dissipation. For continuous operation, do not exceed
the absolute maximum junction temperature rating of
+150°C.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15011ATJ+ | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX15011ATJ+T | 功能描述:低压差稳压器 - LDO Automotive 300mA w/Switched Output RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX15012AASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012AASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012BASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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