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参数资料
| 型号： | MAX15012 |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| 中文描述： | 175V/2A、高速、半桥MOSFET驱动器 |
| 文件页数： | 4/14页 |
| 文件大小： | 283K |
| 代理商： | MAX15012 |
M
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
4
_______________________________________________________________________________________
Note 1:
All devices are 100% tested at T
A
= +125°C. Limits over temperature are guaranteed by design.
Note 2:
Ensure that the V
DD
-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 3:
Maximum operating supply voltage (V
DD
) reduces linearly from 12.6V to 10.5V with its maximum voltage (V
HS_MAX
) increasing
from 125V to 175V. See the
Typical Operating Characteristics
and
Applications Information
sections.
Note 4:
Guaranteed by design, not production tested.
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
= V
BST
= +12V)
C
L
= 1000pF
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 1000pF
C
L
= 5000pF
C
L
= 10,000pF
Figure 1, C
L
= 1000pF
(Note 4)
7
33
65
7
33
65
30
35
30
35
Rise Time
t
R
ns
Fall Time
t
F
ns
CMOS
TTL
CMOS
TTL
55
63
55
63
Turn-On Propagation Delay Time
t
D_ON
ns
Turn-Off Propagation Delay Time
t
D_OFF
Figure 1, C
L
= 1000pF
(Note 4)
ns
Delay Matching Between Driver-
Low and Driver-High
t
MATCH
C
L
= 1000pF, Figure 1 (Note 4)
2
8
ns
Internal Nonoverlap
1
ns
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相关代理商/技术参数 |
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|---|---|
| MAX15012AASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012AASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012BASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012BASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012CASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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