参数资料
型号: MAX15012AASA+
厂商: Maxim Integrated Products
文件页数: 8/18页
文件大小: 0K
描述: IC DRIVER MOSFET 8-SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 100
配置: 半桥
输入类型: 非反相
延迟时间: 30ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 175V
电源电压: 8 V ~ 12.6 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Pin Description
PIN
1
2
3
4
5
6
7
8
NAME
V DD
BST
DH
HS
IN_H
IN_L
GND
DL
EP
FUNCTION
Power Input. Bypass V DD to GND with a parallel combination of 0.1μF and 1μF ceramic capacitors.
Boost Flying Capacitor Connection. Connect a 0.1μF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting Logic Input (MAX15012A/C and MAX15013A/C). Low-side inverting logic
input (MAX15012B/D and MAX15013B/D).
Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.
Low-Side-Gate Driver Output. Drives low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground
plane to aid in heat dissipation (MAX15012C/D and MAX15013C/D only).
IN_L
(MAX15012A/C
V IL
V IH
MAX15013A/C)
90%
DL
10%
t D_OFF1
t F
t D_ON1
t R
IN_L
(MAX15012B/D
MAX15013B/D)
V IH
V IL
IN_H
t D_OFF2
V IH
t D_ON2
V IL
90%
DH
10%
t D_OFF3
t F
t MATCH = (t D_ON3 - t D_ON1 ) or (t D_OFF3 - t D_OFF1 ) FOR "A/C" VERSION
t MATCH = (t D_ON3 - t D_ON2 ) or (t D_OFF3 - t D_OFF2 ) FOR "B/D" VERSION
Figure 1. Timing Characteristics for Noninverting and Inverting Logic Inputs
t D_ON3
t R
8
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MAX15012AASA+ 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX15012AASA+T 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX15012BASA+ 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX15012BASA+T 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX15012CASA+ 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube