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参数资料
| 型号： | MAX15012CASA |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| 中文描述： | 175V/2A，高速，半桥MOSFET驱动器 |
| 文件页数： | 10/18页 |
| 文件大小： | 381K |
| 代理商： | MAX15012CASA |
M
Minimum Input Pulse Width
The MAX15012/MAX15013 use a single-shot level-shifter
architecture to achieve low propagation delay. Typical
level shifter architecture causes a minimum (high or low)
pulse width (t
Dmin
) at the output that may be higher than
the logic-input pulse width. For the MAX15012/
MAX15013 devices, the DH minimum high pulse-width
(t
Dmin-DH-H
) is lower than the DL minimum low pulse
width (t
Dmin-DL-L
) to avoid any shoot-through in the
absence of external BBM delay during the narrow pulse
at low duty cycle. See Figure 2.
At high duty cycle (close to 100%), the DH minimum low
pulse width (t
Dmin-DH-L
) must be higher than the DL min-
imum low pulse width (t
Dmin-DL-L
) to avoid the overlap
and shoot-through. See Figure 3. In case of the
MAX15012/MAX15013, there is a possibility of about
40ns overlap if an external BBM delay is not provided. It
is recommended to add external delay in the INH path
so that the minimum low pulse width seen at INH is
always longer than t
PW-min
. See the
Electrical
Characteristics
table for the typical values of t
PW-min
.
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
10
______________________________________________________________________________________
Figure 2. Minimum Pulse-Width Behavior for Narrow Duty-Cycle Input (On-Time < t
PW-min
)
PWMIN
DH
DL
t
DMIN-DH-H
t
DMIN-DL-L
INH
INL
DH
HS
N
DL
N
V
IN
V
OUT
V
DD
MAX15012B/
MAX15012D/
MAX15013B/
MAX15013D
PWMIN
IN-BUILT
DEAD TIME
相关PDF资料 |
PDF描述 |
|---|---|
| MAX15012DASA | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| MAX15013 | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| MAX15013AASA | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| MAX15013BASA | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
| MAX15013CASA | 175V/2A, High-Speed, Half-Bridge MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15012CASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012CASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012DASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15012DASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15013AASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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