参数资料
型号: MAX15013CASA
厂商: Maxim Integrated Products, Inc.
英文描述: 175V/2A, High-Speed, Half-Bridge MOSFET Drivers
中文描述: 175V/2A,高速,半桥MOSFET驱动器
文件页数: 5/18页
文件大小: 381K
代理商: MAX15013CASA
M
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________
5
UNDERVOLTAGE LOCKOUT
(V
DD
AND V
BST
RISING) vs. TEMPERATURE
M
TEMPERATURE (
°
C)
U
110
95
65 80
-10 5
20 35 50
-25
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.3
7.4
7.5
6.5
-40
125
UVLO
VDD
UVLO
BST
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
M
TEMPERATURE (
°
C)
U
110
95
65 80
-10 5
20 35 50
-25
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
-40
125
UVLO
BST
HYSTERESIS
UVLO
HYSTERESIS
I
DD
vs. V
DD
MAX15012/13 toc03
4ms/div
V
2V/div
I
DD
50
μ
A/div
0
μ
A
0V
IN_H = GND
IN_L = V
DD
I
DDO
+ I
BSTO
vs. V
DD
(f
SW
= 250kHz)
M
V
DD
(V)
I
D
+
I
B
12
10 11
3
4
5
6
7
8
9
1
2
1.0
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
0
13
0
60
40
20
80
100
120
140
160
180
200
0.5
0.7
0.6
0.8
0.9
1.0
1.1
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
M
V
DD
- V
BST
(V)
I
D
T
A
= +125
°
C
T
A
= +25
°
C
T
A
= 0
°
C
T
A
= -40
°
C
0
60
40
20
80
100
120
140
160
0
4
2
6
8
10
12
V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
M
V
DD
(V)
I
D
μ
A
T
A
= -40
°
C
T
A
= +25
°
C
V
DD
= V
BST
V
HS
= GND
IN_H = GND
IN_L = V
DD
T
A
= +125
°
C
0
6
3
9
12
15
18
21
0
4
2
6
8
10
1
5
3
7
9
11 12 13 14 15
BST QUIESCENT CURRENT
vs. BST VOLTAGE
M
V
BST
(V)
I
B
μ
A
V
= V
+ 1V,
NO SWITCHING
T
A
= +125
°
C
T
A
= -40
°
C, T
A
= 0
°
C, T
A
= +25
°
C
Typical Operating Characteristics
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
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