参数资料
型号: MAX15059BATE+
厂商: Maxim Integrated Products
文件页数: 15/16页
文件大小: 0K
描述: IC REG CONV 76V APD 16TQFN
标准包装: 100
应用: 转换器电流监控器,APD 偏压应用
输入电压: 2.8 V ~ 5.5 V
输出数: 1
输出电压: 3.3 V ~ 76 V
工作温度: -40°C ~ 85°C
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
76V, 300mW Boost Converter and Current
Monitor for APD Bias Applications
Applications Information
Using APD or PIN Photodiodes
in Fiber Applications
When using the MAX15059 to monitor APD or PIN photo-
diode currents in fiber applications, several issues must
be addressed. In applications where the photodiode
must be fully depleted, keep track of voltages budgeted
for each component with respect to the available supply
voltage(s). The current monitors require as much as 3.5V
between BIAS and APD, which must be considered part
of the overall voltage budget.
Additional voltage margin can be created if a nega-
tive supply is used in place of a ground connection,
as long as the overall voltage drop experienced by
the MAX15059 is less than or equal to 76V. For this
type of application, the MAX15059 is suggested so the
output can be referenced to “true” ground and not the
negative supply. The MAX15059’s output current can
be referenced as desired with either a resistor to ground
or a transimpedance amplifier. Take care to ensure
that output voltage excursions do not interfere with the
required margin between BIAS and MOUT. In many fiber
applications, MOUT is connected directly to an ADC
that operates from a supply voltage that is less than the
In some applications where pilot tones are used to identi-
fy specific fiber channels, higher bandwidths are desired
at MOUT to detect these tones. Consider the minimum
and maximum currents to be detected, then consult the
frequency response and noise typical operating curves.
If the minimum current is too small, insufficient band-
width could result, while too high a current could result in
excessive noise across the desired bandwidth.
Layout Considerations
Careful PCB layout is critical to achieve low switching
losses and clean and stable operation. Protect sensitive
analog grounds by using a star ground configuration.
Connect SGND and PGND together close to the device
at the return terminal of the output bypass capacitor. Do
not connect them together anywhere else. Keep all PCB
traces as short as possible to reduce stray capacitance,
trace resistance, and radiated noise. Ensure that the
feedback connection to FB is short and direct. Route
high-speed switching nodes away from the sensitive
analog areas. Use an internal PCB layer for SGND as an
EMI shield to keep radiated noise away from the device,
feedback dividers, and analog bypass capacitors. Refer
to the MAX15059 Evaluation Kit data sheet for a layout
example.
voltage at BIAS. Connecting the MAX15059’s clamping
diode output, CLAMP, to the ADC power supply helps
avoid damage to the ADC. Without this protection, volt-
ages can develop at MOUT that might destroy the ADC.
PROCESS: BiCMOS
Chip Information
This protection is less critical when MOUT is connected
directly to subsequent transimpedance amplifiers (linear
or logarithmic) that have low-impedance, near-ground-
referenced inputs. If a transimpedance amp is used on
the low side of the photodiode, its voltage drop must
also be considered. Leakage from the clamping diode
is most often insignificant over nominal operating condi-
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages . Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
tions, but grows with temperature.
To maintain low levels of wideband noise, lowpass filter-
ing the output signal is suggested in applications where
PACKAGE
TYPE
16 TQFN-EP
PACKAGE
CODE
T1633-4
OUTLINE
NO.
LAND
PATTERN NO.
only DC measurements are required. Connect the filter
capacitor at MOUT. Determining the required filtering
components is straightforward, as the MAX15059 exhib-
its a very high output impedance of 5G I .
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15
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