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| 型号： | MAX15070BAUT+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER HNM LL SOT23-6 |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 11ns |
| 电流 - 峰： | 3A，7A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 6 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-6 |
| 包装： | 带卷 (TR) |
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V+, IN+, IN- .......................................................... -0.3V to +16V
N_OUT, P_OUT ...........................................-0.3V to (V+ + 0.3V)
N_OUT Continuous Output Current (Note 1) ................. -200mA
P_OUT Continuous Output Current (Note 1) ................ +125mA
Operating Temperature Range ...................... -40 N C to +125 N C
Junction Temperature ................................................... +150 N C
Storage Temperature Range........................... -65 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Soldering Temperature (reflow) ......................................+260 N C
Continuous Power Dissipation (T A = +70 N C)
SOT23 (derate 8.7mW/ N C above +70 N C) .................. 696mW*
* As per JEDEC 51 standard.
Note 1: Continuous output current is limited by the power dissipation of the package.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
SOT23
Junction-to-Ambient Thermal Resistance ( B JA ) ........115 N C/W
Junction-to-Case Thermal Resistance ( B JC ) .................. 80 N C/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-lay-
er board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = +12V, C L = 0F, T A = T J = -40 N C to +125 N C, unless otherwise noted. Typical values are at T A = +25 N C. Parameters specified at
V+ = +4.5V apply to the MAX15070A only; see Figure 1.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY (V+)
Input Voltage Range
MAX15070A
MAX15070B
4
6
14
14
V
Undervoltage Lockout
V UVLO
V+ rising
3.3
3.45
3.6
V
Undervoltage-Lockout
Hysteresis
200
mV
Undervoltage Lockout to Output
Rising Delay
Undervoltage Lockout to Output
Falling Delay
V+ rising
V+ falling
100
2
F s
F s
Supply Current
I V+
V+ = 14V, no switching
V+ = 14V, switching at 1MHz
0.5
2.3
1
mA
n-CHANNEL OUTPUT (N_OUT)
V+ = +12V,
T A = +25 N C
0.256
0.32
N_OUT Resistance
R N_OUT
I N_OUT = -100mA
V+ = +4.5V,
T A = +125 N C
T A = +25 N C
0.268
0.45
0.33
I
I N_OUT = -100mA
T A = +125 N C
0.465
Power-Off Pulldown Resistance
V+ = unconnected, I N_OUT = -1mA, T A = +25 N C
1.3
1.9
k I
Output Bias Current
Peak Output Current
I BIASN
I PEAKN
V N_OUT = V+
C L = 22nF
6
7.0
11
F A
A
2
Maxim Integrated
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