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| 型号： | MAX1538ETI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 10/22页 |
| 文件大小： | 0K |
| 描述： | IC PWR SOURCE SELECTOR 28-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 双电池控制器 |
| 电池化学： | 所有电池类型 |
| 电源电压： | 4.75 V ~ 28 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
Power-Source Selector for
Dual-Battery Systems
Pin Description (continued)
PIN
14
15, 21
16
17
18
19
20
22
23
24
25
26
27
28
NAME
ADPBLK
N.C.
EXTLD
CHGIN
DISBAT
CHGA
CHGB
BATB
DISB
DISA
BATA
BATSUP
GND
V DD
FUNCTION
Gate Drive for the Adapter-Blocking P-Channel MOSFET. Connect ADPBLK to the gate of P3 (Figure 1). P3
enables and disables the battery discharge path. ADPBLK is driven relative to EXTLD. ADPBLK and
DISBAT are driven with the same control signal.
Not Internally Connected
External Load. EXTLD is the supply rail for REVBLK and ADPBLK.
Charger Node Input. CHGIN is the supply rail for DISBAT, CHGA, and CHGB.
Gate Drive for the Battery-Discharge P-Channel MOSFET. Connect DISBAT to the gate of P4 (Figure 2). P4
disconnects the battery from the system load when charging from a step-up converter. Exclude P4 and
leave DISBAT disconnected if using a step-down charger. DISBAT is driven relative to CHGIN. DISBAT and
ADPBLK are driven by the same control signal.
Gate Drive for the Charge Battery A P-Channel MOSFET. Connect CHGA to the gate of P6 (Figure 1). P6
enables and disables the charge path into battery A. CHGA is driven relative to CHGIN. CHGA and DISA
are driven by the same control signal.
Gate Drive for the Charge Battery B P-Channel MOSFET. Connect CHGB to the gate of P7 (Figure 1). P7
enables and disables the charge path into battery B. CHGB is driven relative to CHGIN. CHGB and DISB
are driven by the same control signal.
Battery B Voltage Input. Battery undervoltage and absence is determined by measuring BATB. BATB is the
supply rail for DISB.
Gate Drive for the Discharge from Battery B P-Channel MOSFET. Connect DISB to the gate of P8 (Figure 1).
P8 enables and disables the discharge path from battery B. DISB is driven relative to BATB. DISB and
CHGB are driven by the same control signal.
Gate Drive for the Discharge from Battery A P-Channel MOSFET. Connect DISA to the gate of P5 (Figure 1).
P5 enables and disables the discharge path from battery A. DISA is driven relative to BATA. DISA and
CHGA are driven by the same control signal.
Battery A Voltage Input. Battery undervoltage and absence is determined by measuring BATA. BATA is the
supply rail for DISA.
BATSUP powers the MAX1538. Diode OR BATA and BATB to BATSUP externally. ADPIN is diode
connected to BATSUP internally. Bypass with a 0.1μF capacitor from BATSUP to GND.
Ground
Linear-Regulator Output. Bypass with a 1μF capacitor from V DD to GND.
10
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相关代理商/技术参数 |
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|---|---|
| MAX1538EVKIT | 功能描述:电源管理IC开发工具 MAX1538EVKIT RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX153C/D | 功能描述:模数转换器 - ADC RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MAX153CAP | 功能描述:模数转换器 - ADC RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MAX153CAP+ | 功能描述:模数转换器 - ADC 8-Bit 1Msps 2.5V Precision ADC RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MAX153CAP+T | 功能描述:模数转换器 - ADC 8-Bit 1Msps 2.5V Precision ADC RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
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