参数资料
型号: MAX16051ETI+
厂商: Maxim Integrated Products
文件页数: 17/21页
文件大小: 0K
描述: IC POWER MONITR/SEQUENCER 28TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 75
应用: 电源监控器,序列发生器
电源电压: 2.7 V ~ 13.2 V
电流 - 电源: 700µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-WFQFN 裸露焊盘
供应商设备封装: 28-TQFN-EP(5x5)
包装: 管件
Voltage Monitors/Sequencer Circuits with
Reverse-Sequencing Capability
Daisy-Chaining the MAX16050/MAX16051
The MAX16050/MAX16051 can be daisy-chained to
sequence and monitor a large number of voltages
(Figure 7). When a fault occurs on any of the monitored
inputs, FAULT goes low, signaling a fast power-down.
Connect all FAULT pins of the MAX16050/MAX16051
together to ensure that all power supplies are turned off
during a fault.
In Figure 7, SHDN is pulled low to initiate the power-
down sequence. When all of the supply voltages moni-
tored by U2 are off, the bus removal output (REM) goes
high, thereby allowing U1 to start sequencing down.
REM normally is at a logic-low state when all voltages
are good. Connect U2 ’s REM to U1 ’s EN_HOLD to
force U1 to stay on even if EN and SHDN are pulled
low. This enable-and-hold circuitry allows the system to
power down correctly.
MOSFET Selection
The external pass MOSFET connects in series with the
sequenced power-supply source. Since the load cur-
rent and the MOSFET drain-to-source impedance
(R DSON ) determine the voltage drop, the on-character-
istics of the MOSFET affect the load supply accuracy.
For highest supply accuracy and lowest voltage drop,
select a MOSFET with an appropriate drain-to-source
on-resistance with a gate-to-source bias of 4.5V to 6.0V
(see Table 2).
Layout and Bypassing
For better noise immunity, bypass V CC to GND with a
0.1μF capacitor installed as close to the device as pos-
sible. Bypass ABP to GND with a 1μF capacitor
installed as close to the device as possible; ABP is an
internally generated voltage and must not be used to
supply more than 1mA to external circuitry. Connect the
exposed pad (EP) to the ground plane for improved
heat dissipation. Do not use EP as the only ground con-
nection for the device.
Table 2. Recommended MOSFETs
MANUFACTURER
Fairchild
Vishay
PART
FDC633N
FDP8030L
FDB8030L
FDD6672A
FDS8876
Si7136DP
Si4872DY
SUD50N02-09P
Si1488DH
V DS
(V)
30
30
30
30
20
30
20
20
V GSth
(V)
0.67
1.5
1.2
2.5
(max)
3
1
3
0.95
R DSON AT V GS = 4.5V
(m ? )
42
4.5
9.5
17
4.5
10
17
49
I MAX AT 50mV
VOLTAGE DROP (A)
1.19
11.11
5.26
2.94
11.11
5
2.94
1.02
Qg (nC)
(TYP)
11
120
33
15
24.5
27
10.5
6
FOOTPRINT
Super
SOT-6
TO-220
TO-263AB
TO-252
SO-8
SO-8
SO-8
TO-252
SOT-363
SC70-6
TO220AB
IRL3716
20
3
4.8
10.4
53
D 2 PAK
TO-262
IRL3402
20
0.7
10
5
78 (max)
TO-220AB
International
Rectifier
IRL3715Z
20
2.1
15.5
3.22
7
TO220AB
D 2 PAK
TO-262
IRLML2502
20
1.2
45
1.11
8
SOT23-3
Micro3
______________________________________________________________________________________
17
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