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参数资料
| 型号： | MAX16126TCA+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | IC LOAD DUMP REV V PROT 12TQFN |
| 标准包装： | 2,500 |
| 应用： | 负载突降，电压保护 |
| 电流 - 电源： | 224µA |
| 电源电压： | 3 V ~ 30 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
MAX16126/MAX16127
Load-Dump/Reverse-Voltage Protection Circuits
DC-DC
V IN
CONVERTER
IN OUT
GATE
10nF
SRC
100 I
OUT
10μF
GND
IN
100k I
SHDN
0.1μF
R1
R2
R3
TERM
UVSET
OVSET
MAX16126
GND
FLAG
Figure 1. Overvoltage and Undervoltage Window Detector Circuit (MAX16126)
= V TH × TOTAL_OV
= (V TH TH-HYS ) × TOTAL_UV
Setting Overvoltage and Undervoltage
Thresholds (MAX16127)
The MAX16127 operates in limiter mode and uses sepa-
rate resistive dividers to set the undervoltage and over-
voltage thresholds. The top of the overvoltage divider
connects to OUT and the top of the undervoltage divider
connects to TERM (see Figure 2 ).
Use the following formula to calculate R4:
R
R4
V OV
where R TOTAL_OV = R3 + R4, V TH is the 1.225V OVSET
rising threshold and V OV is the desired overvoltage
threshold. The falling threshold of V TH is 5% below the
rising threshold.
Similarly, to calculate the values of R1 and R2:
R
R2 - V
V UV
Maxim Integrated
where R TOTAL_UV = R1 + R2, V TH is the 1.225V UVSET
rising threshold, V TH-HYS is the hysteresis, and V UV is the
desired undervoltage threshold.
Use the nearest standard-value resistor that is less
than the calculated value. A lower value for total resis-
tance dissipates more power, but provides slightly better
accuracy.
MOSFET Selection
MOSFET selection is critical to design a proper protec-
tion circuit. Several factors must be taken into account:
the gate capacitance, the drain-to-source voltage rating,
the on-resistance (R DS(ON) ), the peak power dissipation
capability, and the average power dissipation limit. In
general, both MOSFETs should have the same part num-
ber. For size-constrained applications, a dual MOSFET
can save board area. Select the drain-to-source voltage
so that the MOSFETs can handle the highest voltage that
might be applied to the circuit. Gate capacitance is not
as critical, but it does determine the maximum turn-on
and turn-off time. MOSFETs with more gate capacitance
tend to respond more slowly.
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX16126TCB+ | 功能描述:监控电路 Load-Dump/Reverse-V Protection Circuits RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX16126TCB+T | 功能描述:监控电路 Load-Dump/Reverse V Protection Circuit RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX16126TCC+ | 功能描述:监控电路 Load-Dump/Reverse-V Protection Circuits RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX16126TCC+T | 功能描述:监控电路 Load-Dump/Reverse V Protection Circuit RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX16126TCD+ | 功能描述:监控电路 Load-Dump/Reverse-V Protection Circuits RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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