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参数资料
| 型号： | MAX16812ATI/V+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 4/21页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVR HIGH BRIGHT 28-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 恒定电流： | 是 |
| 拓扑： | PWM，SEPIC，降压（降压），升压（升压） |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 车载 |
| 类型 - 次要： | 高亮度 LED（HBLED） |
| 频率： | 125kHz ~ 500kHz |
| 电源电压： | 5.5 V ~ 76 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 管件 |
| 工作温度： | -40°C ~ 125°C |
Integrated High-Voltage LED Driver
with Analog and PWM Dimming Control
ELECTRICAL CHARACTERISTICS (continued)
(V IN = V EN = 12V, C L_REG = 3.3μF, C H_REG = 1μF, C REF = 47nF, V TGRM = 0V, R SRC = 0.2 Ω , R CS = 1 Ω , T A = T J = -40°C to +125°C,
unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
HIGH-SIDE DIMMING LINEAR REGULATOR ((V HV - V LV ) = 21V)
V LV = V CS- , (V CS+ - V CS- ) = 0.3V,
(V DD - V LV ) = 1V, V DIM = 1V, V TGRM = 0V,
V DGT = 1V, V REFI = 1.0V, sinking
1.2
Minimum Output Current
I DGT
V LV = V CS- , (V CS+ - V CS- ) = 0.2V,
(V DD - V LV ) = 1V, V TGRM = 0V, V DGT = 3V,
V REFI = 1.0V, V DIM = 1V, sourcing
1.2
mA
Output Voltage Range
DC Gain
C DGT = 1nF to LV
0.2
60
5.0
V
dB
DD Input Bias Current
I DD
(V DD - V CS -) = 0.5V
-3
+3
μA
DD Input Low Threshold
V TGRM = 0V, V DIM = 1V, V REFI = 1.2V,
(V DGT - V LV) > 1.5V, V DD falling
0.25
0.50
0.75
V
DIMMING ((V HV - V LV ) = 21V)
DIM Input Bias Current
TGRM Input High Threshold
I DIM
V DIM = 1.1V
-1
1.18
1.23
+1
1.27
μA
V
TGRM Reset High-to-TGRM Low
Pulse Width
1
μs
TGRM Reset Switch R DS(ON)
Dimming Rise and Fall LED
Current Times
V TGRM = 1.3V
5
20
Ω
μs
OVERVOLTAGE PROTECTION (OV)
OV Input High Threshold
V OV rising
1.180
1.230
1.292
V
OV Input Threshold Hysteresis
14
mV
OV Input Bias Current
I OV
V OV = 1.1V
-1
+1
μA
INTERNAL OSCILLATOR CLOC K
Internal Clock Frequency
f OSC
RT = 2M Ω to AGND
RT = 50k Ω to AGND
470
105
525
125
570
155
kHz
SLOPE COMPENSATION INPUT (SLP)
SLP Input Current
I SLP
V SLP = 0V
150
μA
LOW-SIDE GATE DRIVE (DRV)
DRV Output Low Impedance
DRV Output High Impedance
R DRV_LO
R DRV_HI
DRV sinking 20mA
DRV sourcing 20mA
3
10
30
45
Ω
Ω
INTERNAL POWER MOSFET
GT Input Leakage Current
Internal MOSFET Gate-to-Source
Threshold Voltage
V TH
V GT = 0 to 5V
-1
2.5
+1
μA
V
Internal MOSFET Gate Charge
Q g
V LX = 50V
8
nC
4
_______________________________________________________________________________________
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