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| 型号： | MAX16819ATT+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVER HIGH BRIGHT 6-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1 |
| 恒定电流： | 是 |
| 拓扑： | PWM，降压（降压） |
| 输出数： | 1 |
| 内部驱动器： | 无 |
| 类型 - 主要： | 车载 |
| 类型 - 次要： | 高亮度 LED（HBLED） |
| 频率： | 2MHz |
| 电源电压： | 4.5 V ~ 28 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-TDFN 裸露焊盘（3x3） |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 125°C |
| 产品目录页面： | 1425 (CN2011-ZH PDF) |
| 其它名称： | MAX16819ATT+TDKR |
2MHz High-Brightness LED Drivers with
High-Side Current Sense and 5000:1 Dimming
ELECTRICAL CHARACTERISTICS (continued)
(V IN = 12V, V DIM = V IN , C VCC = 1μF, R SENSE = 0.5 ? , T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at
T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GATE DRIVER
Gate Driver Source Current
Gate Driver Sink Current
V CSN = V IN , V DRV = 0.5 x V CC
V CSN = V IN - 250mV, V DRV = 0.5 x V CC
0.5
1
A
A
Gate Driver Output-Voltage High
Gate Driver Output-Voltage Low
V OH
V OL
I DRV = 10mA
I DRV = -10mA
V CC - 0.5
0.5
V
V
DIM INPUT
Maximum DIM Frequency
f DIM
20
kHz
DIM Input-Voltage High
DIM Input-Voltage Low
DIM Hysteresis
DIM Turn-On Time
DIM Turn-Off Time
DIM Input Leakage High
V IH
V IL
DIM HYS
t DIMON
t DIMOFF
V CSN = V IN , increase DIM until V DRV >
(V CC - 0.5V)
V CSN = V IN , decrease DIM until
V DRV < 0.5V
DIM rising edge to V DRV = 0.5 x V CC ,
C DRV = 1nF
DIM falling edge to V DRV = 0.5 x V CC ,
C DRV = 1nF
V DIM = V IN
2.8
200
100
100
0.6
10
V
V
mV
ns
ns
μA
DIM Input Leakage Low
V DIM = 0V
-1
+1
μA
V CC REGULATOR
Regulator Output Voltage
Load Regulation
Line Regulation
Power-Supply Rejection Ratio
Current Limit
Regulator Startup Time
V CC
PSRR
I LIM
t STRAT
I VCC = 0.1mA to 10mA, V IN = 5.5V to 28V
I VCC = 0.1mA to 10mA, V IN = 4.5V to 28V
I VCC = 0.1mA to 10mA, V IN = 12V
V IN = 6V to 28V, I VCC = 10mA
V IN = 12V, I VCC = 5mA, f IN = 10kHz
V IN = 4.5V, V CC = 0V
V IN = 4.5V, V CC = 4V
V CC = 0 to 4.5V
4.5
4.0
4
11
-35
45
18
350
5.5
5.5
V
V
?
mV
dB
mA
mA
μs
Note 1: All devices are 100% production tested at T J = +25°C and +125°C. Limits to -40°C are guaranteed by design.
_______________________________________________________________________________________
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