参数资料
型号: MAX16914AUB/V+
厂商: Maxim Integrated
文件页数: 9/10页
文件大小: 0K
描述: IC CTRLR IDEAL DIODE 10UMAX
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
应用: 电池备份,工业/汽车,大电流开关
FET 型: P 沟道
输出数: 2
内部开关:
电源电压: 4.5 V ~ 19 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-µMAX
包装: 管件
MAX16914/MAX16915
Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
Reverse-Polarity Protection MOSFET (P1)
Most battery-powered applications must include reverse-
voltage protection. Many times this is implemented with
a diode in series with the battery. The disadvantage in
using a diode is the forward-voltage drop of the diode,
which reduces the operating voltage available to down-
stream circuits (V LOAD = V BATTERY - V DIODE ).
The MAX16914/MAX16915 include high-voltage GATE1
drive circuitry allowing users to replace the high-voltage
drop series diode with a low-voltage-drop MOSFET
device (as shown in the Typical Operating Circuit ). The
forward-voltage drop is reduced to I LOAD x R DS(ON) of
P1. With a suitably chosen MOSFET, the voltage drop
can be reduced to millivolts.
In normal operating mode, internal GATE1 output cir-
cuitry enhances P1. The constant enhancement ensures
P1 operates in a low R DS(ON) mode, but the gate-source
junction is not overstressed during high battery-voltage
applications or transients (many MOSFET devices specify
During reverse-battery conditions, GATE1 is limited to
GND and the P1 gate-source junction is reverse biased.
P1 is turned off and neither the MAX16914/MAX16915
nor the load circuitry is exposed to the reverse-battery
voltage. Care should be taken to place P1 (and its inter-
nal drain-to-source diode) in the correct orientation for
proper reverse-battery operation.
Thermal Shutdown
The MAX16914/MAX16915 thermal-shutdown feature
turns off both MOSFETs if the IC junction temperature
exceeds the maximum allowable thermal dissipation.
When the junction temperature exceeds T J = +170 N C,
the thermal sensor signals the shutdown logic, turning off
both GATE1 and GATE2 outputs and allowing the device
to cool. The thermal sensor turns GATE1 and GATE2 on
again after the IC’s junction temperature cools by 20 N C.
For continuous operation, do not exceed the absolute
maximum junction-temperature rating of T J = +150 N C.
a Q 20V V GS absolute maximum). As V CC drops below
10V, GATE1 is limited to GND, reducing P1 V GS to V CC .
In normal operation, the P1 power dissipation is very low:
PROCESS: BiCMOS
Chip Information
P1 = I LOAD 2 x R DS(ON)
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages . Note
that “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character,
but the drawing pertains to the package regardless of RoHS
status.
Maxim Integrated
PACKAGE
TYPE
10 μMAX
PACKAGE
CODE
U10+2
OUTLINE
NO.
LAND
PATTERN NO.
9
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