参数资料
型号: MAX1757EAI+
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: 稳压器
英文描述: Stand-Alone, Switch-Mode Li+ Battery Charger with Internal 14V Switch
中文描述: BATTERY CHARGE CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO28
封装: 5.30 MM, 0.65 MM PITCH, SSOP-28
文件页数: 5/17页
文件大小: 218K
代理商: MAX1757EAI+
MAX1757
Stand-Alone, Switch-Mode
Li+ Battery Charger with Internal 14V Switch
______________________________________________________________________________________
13
When choosing the current-sense resistor, note that the
voltage drop across this resistor adds to the power
loss, reducing efficiency. Reducing the voltage across
the current-sense resistor may degrade input current
limit accuracy due to the input offset of the input cur-
rent-sense amplifier.
The input current error amplifier (GMS) is compensated
at CCS. A 0.1F capacitor at CCS provides suitable
performance for most applications.
PWM Controller
The PWM controller drives the internal high-side MOS-
FET to control charging current or voltage. The input to
the PWM controller is the lowest of CCI, CCV, or CCS.
An internal clamp limits the noncontrolling signals to
within 200mV of the controlling signal to prevent delay
when switching between regulation loops.
The current mode PWM controller measures the induc-
tor current to regulate the output voltage or current,
simplifying stabilization of the regulation loops.
Separate compensation of the regulation circuits allows
each to be optimally stabilized. Internal slope compen-
sation is included, ensuring stable operation over a
wide range of duty cycles.
The controller drives an internal N-channel MOSFET
switch to step the input voltage down to the battery
voltage. The high-side MOSFET gate is driven to a volt-
age higher than the input source voltage by a bootstrap
capacitor. This capacitor (between BST and LX) is
charged through a diode from VL when LX is low. An
internal N-channel MOSFET turns on momentarily after
the high-side switch turns off, pulling LX to PGND to
ensure that the bootstrap capacitor charges. The high-
side MOSFET gate is driven from BST, supplying suffi-
SHUTDOWN
FASTCHG = HIGH
FULLCHG = HIGH
FAULT = HIGH
RESET
FASTCHG = HIGH
FULLCHG = HIGH
FAULT = HIGH
PREQUAL
FASTCHG = LOW
FULLCHG = HIGH
FAULT = HIGH
FAULT
FASTCHG = HIGH
FULLCHG = HIGH
FAULT = LOW
FAST CHARGE
FASTCHG = LOW
FULLCHG = HIGH
FAULT = HIGH
FULL CHARGE
FASTCHG = HIGH
FULLCHG = LOW
FAULT = HIGH
DONE
FASTCHG = HIGH
FULLCHG = HIGH
FAULT = HIGH
TOP-OFF
FASTCHG = HIGH
FULLCHG = HIGH
FAULT = HIGH
TEMP
OK
TEMP
OK
TEMP
OK
TEMP
OK
TEMP
NOT OK
TOP-OFF
TIMEOUT
ICHARGE < IMIN OR
FULL-CHARGE
TIMEOUT
ONCE PER
SECOND
ONCE PER
SECOND
TEMP
QUAL
VBATT > 2.5V
VBATT < 0.95
× VBATTR
VBATT < 0.95
× VBATTR
VDCIN < BATT
VBATT < UNDERVOLTAGE
THRESHOLD
VBATT = BATTERY
REGULATION VOLTAGE (VBATTR)
FAST-CHARGE
TIMEOUT
PREQUAL
TIMEOUT
TEMP
NOT OK
TEMP
NOT OK
SHUTDOWN IS
ENTERED FROM ALL STATES
WHEN SHDN IS LOW.
SHDN HIGH
VDCIN > VBATT
Figure 4. State Diagram
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