参数资料
型号: MAX1809EEE+T
厂商: Maxim Integrated Products
文件页数: 3/17页
文件大小: 0K
描述: IC DDR TERMINATION 16-QSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
应用: 转换器,DDR
输入电压: 3 V ~ 5.5 V
输出数: 1
输出电压: 1.1 V ~ 5.5 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
供应商设备封装: 16-QSOP
包装: 带卷 (TR)
3A, 1MHz, DDR Memory Termination Supply
ELECTRICAL CHARACTERISTICS (continued)
(V IN = V CC = 3.3V, V EXTREF = 1.1V, T A = 0 ° C to +85 ° C , unless otherwise noted. Typical values are at T A = +25 ° C.)
PARAMETER
SS Source Current
SS Sink Current
SYMBOL
I SS
I SS
V SS = 1V
CONDITIONS
MIN
4
1
TYP
5
50
MAX
6
UNITS
μA
mA
SHDN Input Current
SHDN Logic Levels
Maximum Output RMS Current
V IL
V IH
I OUT(RMS)
V SHDN = 0, V CC
-1
2
+1
0.8
3.1
μA
V
A RMS
ELECTRICAL CHARACTERISTICS
(V IN = V CC = 3.3V, V EXTREF = 1.1V, T A = -40 ° C to +85 ° C , unless otherwise noted.) (Note 4)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Voltage
Feedback Voltage Accuracy
(V FB - V EXTREF )
V IN , V CC
V IN = V CC = 3V to 5.5V, I LOAD = 0,
V EXTREF = 1.25V
3.0
-24
5.5
+24
V
mV
External Reference Voltage
Range
Reference Voltage
V EXTREF
V REF
V IN = V CC = 3 V to 5.5V
V REF -
0.01V
1.067
V IN -
1.9V
1.133
V
V
PMOS Switch
On-Resistance
NMOS Switch
On-Resistance
Current-Limit Threshold
R PMOS
R NMOS
I LIMIT
I LX = 0.5A
I LX = 0.5A
V IN > V LX
V IN = 4.5V
V IN = 3V
V IN = 4.5V
V IN = 3V
3.3
200
250
150
200
4.9
m ?
m ?
A
FB Input Bias Current
I FB
V FB = V EXTREF + 0.1V
300
nA
Off-Time
t OFF
R TOFF = 110k ?
0.85
1.15
μs
Note 2: The output voltage will have a DC-regulation level lower than the feedback error comparator threshold by 50% of the ripple.
Note 3: Recommended operating frequency, not production tested.
Note 4: Specifications from 0 ° C to -40 ° C are guaranteed by design, not production tested.
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