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| 型号： | MAX19997AETX+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/35页 |
| 文件大小： | 0K |
| 描述： | IC DOWNCONVERTER 2CH 36TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| RF 型： | CDMA，EDGE，MMDS，UMTS，WCDMA |
| 频率： | 1.8GHz ~ 2.9GHz |
| 混频器数目： | 1 |
| 增益： | 8.7dB |
| 噪音数据： | 10.4dB |
| 次要属性： | 降频变频器 |
| 电流 - 电源： | 310mA，420mA |
| 电源电压： | 3 V ~ 3.6 V，4.75 V ~ 5.25 V |
| 包装： | 托盘 |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
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MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
V CC to GND ...........................................................-0.3V to +5.5V
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (V CC + 0.3V)
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF_ and LO is DC
shorted to GND through balun)................................... ...50mA
Continuous Power Dissipation (Note 1) ..............................6.5W
PACKAGE THERMAL CHARACTERISTICS
Junction-to-Ambient Thermal Resistance ( θ JA )
(Notes 2, 3)...................................................................38°C/W
Junction-to-Board Thermal Resistance ( θ JB )................12.2°C/W
Operating Case Temperature Range
(Note 4) .................................................T C = -40°C to +100°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Junction-to-Case Thermal Resistance ( θ JC )
(Notes 1, 3)..................................................................7.4°C/W
Note 1: Based on junction temperature T J = T C + ( θ JC x V CC x I CC ). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature T J = T A + ( θ JA x V CC x I CC ). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial .
Note 4: T C is the temperature on the exposed pad of the package. T A is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1) , no input RF or LO signals applied, V CC = 4.75V to
5.25V, T C = -40°C to +85°C. Typical values are at V CC = 5.0V, T C = +25°C, unless otherwise noted. R1, R4 = 750 ? , R2, R5 = 698 ? .)
PARAMETER
Supply Voltage
Total Supply Current
SYMBOL
V CC
I CC
V CC = 5.0V
V CC = 5.25V
CONDITIONS
MIN
4.75
TYP
388
390.4
MAX
5.25
420
UNITS
V
mA
V CC (Pin 4) Supply Current
(Main and Diversity Paths)
V CC (Pin 10) Supply Current
(Diversity Path)
V CC (Pin 16) Supply Current
(Diversity Path)
V CC (Pin 21) Supply Current
(Main and Diversity Paths)
V CC (Pin 30) Supply Current
(Main Path)
V CC (Pin 36) Supply Current
(Main Path)
IFM Bias Supply Current (Main
Path)
IFD Bias Supply Current
(Diversity Path)
2
V CC = 5.25V
V CC = 5.25V
V CC = 5.25V
V CC = 5.25V
V CC = 5.25V
V CC = 5.25V
Total bias feeding IFM- and IFM+ through
R3, L1 and L2; V CC = 5.25V
Total bias feeding IFD+ and IFD- through
R6, L3 and L4; V CC = 5.25V
2.5
8.9
109.3
28.3
109.3
8.9
61.6
61.6
mA
mA
mA
mA
mA
mA
mA
mA
Maxim Integrated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX19997AETX+ | 功能描述:上下转换器 High-Gain 1.8GHz to 2.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128 |
| MAX19997AETX+T | 功能描述:上下转换器 High-Gain 1.8GHz to 2.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128 |
| MAX19998AETP+ | 功能描述:上下转换器 High-Gain 2.3GHz to 4.5GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128 |
| MAX19998AETP+T | 功能描述:上下转换器 High-Gain 2.3GHz to 4.5GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128 |
| MAX19998AEVKIT# | 制造商:Maxim Integrated Products 功能描述:SIGE HIGH-LINEARITY 2300MHZ TO 4000MHZ DOWNCONVERSION MIXER - Boxed Product (Development Kits) |
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