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| 型号： | MAX2016ETI+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/20页 |
| 文件大小： | 0K |
| 描述： | IC DETECT/CNTRL LOG 28-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 频率： | 30kHz ~ 2.5GHz |
| RF 型： | 手机，GSM，EDGE，CDMA |
| 输入范围： | -70dBm ~ 10dBm |
| 精确度： | ±1dB |
| 电源电压： | 2.7 V ~ 5.25 V |
| 电流 - 电源： | 16mA |
| 包装： | 带卷 (TR) |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
LF-to-2.5GHz Dual Logarithmic Detector/
Controller for Power, Gain, and VSWR Measurements
ABSOLUTE MAXIMUM RATINGS
V CC to GND .........................................................-0.3V to +5.25V
Input Power Differential (RFIN_+, RFIN_-)......................+23dBm
Input Power Single Ended (RFIN_+ or RFIN _-) .............+19dBm
All Other Pins to GND.................................-0.3V to (V CC + 0.3V)
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Continuous Power Dissipation (T A = +70°C)
28-Pin, 5mm x 5mm Thin QFN (derate 35.7mW/°C
above +70°C)..................................................................2.8W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V CC = +2.7V to +3.6V, R 1 = R 2 = R 3 = 0 Ω , T A = -40°C to +85°C, unless otherwise noted. Typical values are at V CC = +3.3V,
CSETL = CSETH = V CC , 50 Ω RF system, T A = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
Supply Voltage
Total Supply Current
V S
V S
I CC
R 6 = 0 Ω
R 6 = 37.4 Ω
2.7
4.75
3.3
5
43
3.6
5.25
55
V
mA
Measured in each pin 2 and pin 20
16
Supply Current
Measured in pin 9
Measured in pin 12
2
9
mA
INPUT INTERFACE
Input Impedance
Differential impedance at RFINA and RFINB
50
Ω
Input Resistance
R
Resistance at SETD
Resistance at SETA and SETB
20
40
k Ω
DETECTOR OUTPUT
Source Current
Sink Current
Minimum Output Voltage
Maximum Output Voltage
Difference Output VOUTD
OUTD Accuracy
Measured at OUTA, OUTB, and OUTD
Measured at OUTA, OUTB, and OUTD
Measured at OUTA, OUTB, and OUTD
Measured at OUTA, OUTB, and OUTD
P RFINA = P RFINB = -30dBm
4
0.45
0.5
1.8
1
±12
mA
mA
V
V
V
mV
COMPARATORS
Output High Voltage
Output Low Voltage
Input Voltage
Input Bias Current
V OH
V OL
R LOAD ≥ 10k Ω
R LOAD ≥ 10k Ω
Measured at CSETL and CSETH
CSETL and CSETH
V CC -
10mV
10
GND to
V CC
1
V
mV
V
nA
REFERENCE
Output Voltage on Pin 25
Load Regulation
R LOAD ≥ 2k Ω
Source 2mA
2
-5
V
mV
2
_______________________________________________________________________________________
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