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参数资料
| 型号： | MAX2029ETP+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC MIXER UP/DOWN HI LIN 20-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| RF 型： | 手机，CDMA2000，EDGE，GSM，W-CDMA |
| 频率： | 815MHz ~ 1GHz |
| 混频器数目： | 1 |
| 噪音数据： | 6.7dB |
| 次要属性： | 升/降频器 |
| 电流 - 电源： | 100mA |
| 电源电压： | 4.75 V ~ 5.25 V |
| 包装： | 管件 |
| 封装/外壳： | 20-WQFN 裸露焊盘 |
| 供应商设备封装： | 20-TQFN-EP（5x5） |
High-Linearity, 815MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
V CC to GND ...........................................................-0.3V to +5.5V
RF (RF is DC shorted to GND through a balun)..................50mA
LO1, LO2 to GND ..................................................-0.3V to +0.3V
IF+, IF- to GND ...........................................-0.3V to (V CC + 0.3V)
TAP to GND ...........................................................-0.3V to +1.4V
LOSEL to GND ...........................................-0.3V to (V CC + 0.3V)
LOBIAS to GND..........................................-0.3V to (V CC + 0.3V)
RF, LO1, LO2 Input Power* ............................................+20dBm
Continuous Power Dissipation (T C = +85°C) (Note A)
20-Pin Thin QFN-EP................................................................5W
θ JA (Note B)....................................................................+38°C/W
θ JC .................................................................................+13°C/W
Operating Temperature Range (Note C) ....T C = -40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note A: Based on junction temperature T J = T C + ( θ JC x V CC x I CC ). This formula can be used when the temperature of the
exposed paddle is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150°C.
Note B: Junction temperature T J = T A + ( θ JA x V CC x I CC ). This formula can be used when the ambient temperature of the EV kit
PCB is known. The junction temperature must not exceed +150°C. See the Applications Information section for details.
Note C: T C is the temperature on the exposed paddle of the package. T A is the ambient temperature of the device and PCB.
*Maximum reliable continuous input power applied to the RF, LO, and IF ports of this device is +15dBm from a 50 Ω source.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V CC = +4.75V to +5.25V, no RF signals applied, T C = -40°C to +85°C. IF+ and IF- are DC grounded through
an IF balun. Typical values are at V CC = +5V, T C = +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V CC
I CC
CONDITIONS
MIN
4.75
TYP
5.00
85
MAX
5.25
100
UNITS
V
mA
LOSEL Input Logic-Low
LOSEL Input Logic-High
Input Current
V IL
V IH
I IH , I IL
2
±0.01
0.8
V
V
μA
AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, C5 = 3.3pF, L1 and C4 not used, V CC = +4.75V to +5.25V, RF and LO ports are driven from 50 Ω sources,
P LO = -3dBm to +3dBm, P RF = 0dBm, f RF = 815MHz to 1000MHz, f LO = 570MHz to 900MHz, f IF = 90MHz, f LO < f RF , T C = -40°C to
+85°C, unless otherwise noted. Typical values are at V CC = +5V, P LO = 0dBm, f RF = 920MHz, f LO = 830MHz, f IF = 90MHz,
T C = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive
SYMBOL
f RF
f LO
f IF
P LO
CONDITIONS
(Note 2)
(Note 2)
External IF transformer dependence (Note 2)
(Note 2)
MIN
815
570
DC
-3
TYP
MAX
1000
900
250
+3
UNITS
MHz
MHz
MHz
dBm
LO2 selected, P LO = +3dBm, T C = +25°C,
f RF = 920MHz to 960MHz, f LO = 830MHz to
870MHz
48
53
LO1-to-LO2 Isolation (Note 3)
LO1 selected, P LO = +3dBm, T C = +25°C,
dB
f RF = 920MHz to 960MHz, f LO = 830MHz to
870MHz
50
56
Maximum LO Leakage at RF Port
P LO = +3dBm
-17
dBm
Maximum LO Leakage at IF Port
P LO = +3dBm, f RF = 920MHz to 960MHz,
f LO = 830MHz to 870MHz (Note 3)
-29.5
-23
dBm
2
_______________________________________________________________________________________
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相关代理商/技术参数 |
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|---|---|
| MAX2029ETP/-T | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:High-Linearity, 815MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch |
| MAX2029ETP+ | 功能描述:射频混合器 .815GHz-1GHz Up/Down Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| MAX2029ETP+/+T | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:High-Linearity, 815MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch |
| MAX2029ETP+T | 功能描述:射频混合器 .815GHz-1GHz Up/Down Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| MAX2029ETP-T | 功能描述:射频混合器 .815GHz-1GHz Up/Down Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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