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参数资料
| 型号： | MAX2203EWT+T10 |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC POWER DETECTOR RMS 6-WLP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 10,000 |
| 频率： | 800MHz ~ 2 GHz |
| RF 型： | CDMA，HSDPA，WCDMA2000 |
| 输入范围： | -24dBm ~ 3dBm |
| 精确度： | ±0.4dB |
| 电源电压： | 2.5 V ~ 4.2 V |
| 电流 - 电源： | 5mA |
| 包装： | 带卷 (TR) |
| 封装/外壳： | 6-WFBGA，WLPBGA |
RMS Power Detector
ABSOLUTE MAXIMUM RATINGS
V CC to GND ...........................................................-0.3V to +4.5V
ENA, OUT, FILT to GND ........................................-0.3V to +3.0V
RFIN Input Power ...........................................................+10dBm
Continuous Power Dissipation (T A = +70 ° C)
6-Bump WLP (derate 2.9mW/ ° C above +70 ° C)...........232mW
Junction-to-Ambient Thermal Resistance ( θ JA )
(Note 1) ......................................................................347°C/W
Operating Temperature Range ...........................-40 ° C to +85 ° C
Storage Temperature Range .............................-65 ° C to +160 ° C
Junction Temperature .....................................................+150 ° C
Lead Temperature (soldering, 10s)..........Reflow Profile (Note 2)
Note 1: Package thermal resistances were obtained using the method described in JEDEC specifications. For detailed information
on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Note 2: Refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
DC ELECTRICAL CHARACTERISTICS
(V CC = 2.5V to 4.2V, T A = -40°C to +85°C, V ENA = 2.7V, no RF signal applied. Typical values are at V CC = 2.8V, T A = +25°C, unless
otherwise noted.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
Supply Current
V CC
I CC
V CC = 2.8V, RF input = -24dBm to +3dBm
2.5
2.8
5
4.2
8
V
mA
Shutdown Supply Current
ENA Logic-High Threshold
ENA Logic-Low Threshold
ENA Input Current
V IH
V IL
V ENA = 0V
V ENA = 1.1V
1.1
0
0.5
25
10
2.7
0.6
μA
V
V
μA
AC ELECTRICAL CHARACTERISTICS
(V CC = 2.8V, T A = -40°C to +85°C, V ENA = 2.7V, f RF = 800MHz to 2GHz, unless otherwise noted. Typical values are at T A = +25°C.)
(Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF Input Frequency
800
2000
MHz
Maximum Output Voltage
Minimum Output Voltage
Minimum Input Power Level
Log Slope
Log Conformance Error with
10dB Step
Power-Detector Accuracy Due to
Temperature
RFIN at +3dBm
No RF input power
+1dB input power step results in at least
25mV increase in V OUT (Note 4)
[(V OUT at +3dBm) - (V OUT at -24dBm)]/27
(Notes 4, 5)
RF input at -4dBm to 0dBm, T A = -40 ° C to
+85 ° C, relative to +25 ° C
1.05
-24
25
-1.3
1.5
300
35
±0.4
1.75
400
45
+1.3
V
mV
dBm
mV/dB
dB
dB
Note 3: Guaranteed by production test at T A = +85°C and 800MHz. Guaranteed by design and characterization at T A = -40°C and
T A = +25°C, and over frequency limits.
Note 4: Guaranteed by design and characterization.
Note 5: Input power -24dBm to +3dBm. Ideal straight line calibrated with input power -20dBm and 0dBm at T A = +25°C.
2
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