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参数资料
| 型号： | MAX2209EBS+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IC RF POWER DETECTOR 4-UCSP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 频率： | 800MHz ~ 2GHz |
| RF 型： | W-CDMA，HSPDA |
| 输入范围： | -25dBm ~ 0dBm |
| 精确度： | ±0.5dB |
| 电源电压： | 2.7 V ~ 5 V |
| 电流 - 电源： | 3.6mA |
| 包装： | 带卷 (TR) |
| 封装/外壳： | 4-WFBGA，CSPBGA |
RF Power Detector
ABSOLUTE MAXIMUM RATINGS
V CC to GND.............................................................-0.3V to +6V
RFIN to GND ......................................... -0.3V to + (V CC + 0.3V)
OUT to GND .......................................... -0.3V to + (V CC + 0.3V)
RFIN Input Power .......................................................... +10dBm
Continuous Power Dissipation (T A = +70 N C)
4-Bump WLP (derate 3mW/ N C above +70 N C).............238mW
Junction-to-Ambient Thermal
Resistance ( B JA ) (Note 1) ..........................................335 N C/W
Operating Temperature Range .......................... -40 N C to +85 N C
Storage Temperature Range............................ -65 N C to +160 N C
Junction Temperature ....................................................+150 N C
Bump Temperature (soldering, Note 2)
Infrared (15s) ...............................................................+260 N C
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a
4-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Note 2: For detailed information on soldering, refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
DC ELECTRICAL CHARACTERISTICS
(V CC = 2.7V to 5.0V, T A = -40 N C to +85 N C, no RF signal applied. Typical values are at V CC = 2.8V, T A = +25 N C, unless otherwise
noted.) (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
Supply Current
2.7
3.6
5.0
6
V
mA
Idle Output Voltage
V CC = 2.8V, no RF signal
35
mV
Output Current Source Capability
Output Current Sink Capability
P IN = 0dBm, V OUT forced to 0.5V
No RF signal, V OUT forced to 2V
750
300
1800
525
F A
F A
AC ELECTRICAL CHARACTERISTICS
(T A = -40 N C to +85 N C, 50 I system, V CC = 2.8V. Typical values are at T A = +25 N C, unless otherwise noted.) (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RF Input Frequency
RF Input VSWR
Output Voltage, 836MHz
Output Voltage, 1950MHz
Residual Error after Room
Temperature Calibration
(T A = -40 N C to +85 N C) (Note 4)
800MHz
2000MHz
-5dBm input
-25dBm input
-5dBm input
-25dBm input
-5dBm input
-25dBm input
800
-17
-12
0.88
0.06
0.72
0.06
2000
Q 0.5
Q 1.5
MHz
dB
V
V
dB
Note 3: Guaranteed by production test at T A = +25 N C. Guaranteed by design and characterization at T A = -40 N C and
T A = +85 N C.
Note 4: Guaranteed by design and characterization. See the Typical Operating Characteristics .
2
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