参数资料
型号: MAX31826MUA+
厂商: Maxim Integrated
文件页数: 3/22页
文件大小: 1648K
描述: IC TEMP SENSOR DIGITAL 8UMAX
标准包装: 50
系列: 1-Wire®
功能: 温度监控系统(传感器)
传感器类型: 内部
感应温度: -55°C ~ 125°C
精确度: ±2°C
拓扑: 寄存器库,变签式暂存器
输出类型: 1-Wire?
输出警报:
输出风扇:
电源电压: 3 V ~ 3.7 V
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-uMAX
包装: 管件
 ? Maxim Integrated Products 3
MAX31826
1-Wire Digital Temperature Sensor
with 1Kb Lockable EEPROM
Note 1:   Limits are 100% production tested at T
A
 = +25癈 and/or T
A
 = +85癈. Limits over the operating temperature range and
relevant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2:   All voltages are referenced to ground.
Note 3:   The pullup supply voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup
is equal to V
PU
. To meet the devices V
IH
 specification, the actual supply rail for the strong pullup transistor must include
margin for the voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
 = V
PU_IDEAL
 + V
TRANSISTOR
.
Note 4:   Guaranteed by design. These limits represent a three sigma distribution.
Note 5:   To guarantee a presence pulse under low-voltage parasite-power conditions, V
ILMAX
 might need to be reduced to as low
as 0.5V.
Note 6:   Logic-high voltages are specified at a 1mA source current.
Note 7:   Standby current specified up to T
A
 = +70NC. Standby current typically is 3FA at T
A
 = +125NC.
Note 8:   To minimize I
DDS
, DQ should be within the following ranges: V
GND
 P V
DQ
 P V
GND
 + 0.3V or V
DD
 - 0.3V P V
DQ
 P V
DD
.
Note 9:   Active current refers to supply current during active temperature conversions or EEPROM writes.
Note 10: DQ line is high (high-impedance state).
Note 11: See the 1-Wire Timing Diagrams.
Note 12: Under parasite power, if t
RSTL
 > 960Fs, a power-on reset (POR) can occur.
AC ELECTRICAL CHARACTERISTICS
(V
DD
 = 3.0V to 3.7V, T
A
 = -55癈 to +125癈, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Temperature Conversion Time
t
CONV
12-bit resolution
150
ms
Time to Strong Pullup On
t
SPON
Start Convert T command, or Copy
Scratchpad 2 command issued
10
Fs
Time Slot
t
SLOT
(Note 11)
60
120
Fs
Recovery Time
t
REC
(Note 11)
1
Fs
Write-Zero Low Time
t
LOW0
(Note 11)
60
120
Fs
Write-One Low Time
t
LOW1
(Note 11)
1
15
Fs
Read Data Valid
t
RDV
(Note 11)
15
Fs
Reset Time High
t
RSTH
(Note 11)
480
Fs
Reset Time Low
t
RSTL
(Notes 11, 12)
480
Fs
Presence-Detect High
t
PDHIGH
(Note 11)
15
60
Fs
Presence-Detect Low
t
PDLOW
(Note 11)
60
240
Fs
DQ Capacitance
C
IN/OUT
25
pF
AD0AD3 Capacitance
C
IN_AD
50
pF
NONVOLATILE MEMORY
EEPROM Write/Erase Cycles
N
EEWR
At T
A
 = +25癈
200k
At T
A
 = +85癈 (worst case)
50k
EEPROM Data Retention
t
EEDR
At T
A
 = +85癈 (worst case)
40
Years
EEPROM Write Time
t
WR
20
25
ms
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