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参数资料
| 型号： | MAX3206EEWL+T |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | UNIDIRECTIONAL, 12 ELEMENT, SILICON, TVS DIODE |
| 封装： | 1.52 X 1.52 MM, ROHS COMPLIANT, WLP-9 |
| 文件页数： | 2/9页 |
| 文件大小： | 146K |
| 代理商： | MAX3206EEWL+T |
MAX3202E/MAX3203E/MAX3204E/MAX3206E
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD
Protection Arrays for High-Speed Data Interfaces
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VCC = +5V ±5%, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +5V and TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Limits over temperature are guaranteed by design, not production tested.
Note 3: Idealized clamp voltages (L1 = L2 = L3 = 0) (Figure 1 ); see the
Applications Information section for more information.
Note 4: Guaranteed by design. Not production tested.
VCC to GND ...........................................................-0.3V to +7.0V
I/O_ to GND ................................................-0.3V to (VCC + 0.3V)
Continuous Power Dissipation (TA = +70°C)
2
× 2 WLP (derate 11.5mW/°C above +70°C)...............920mW
3
× 2 UCSP (derate 3.4mW/°C above +70°C) ..............273mW
3
× 2 WLP (derate 12.3mW/°C above +70°C)...............984mW
3
× 3 WLP (derate 14.1mW/°C above +70°C).............1128mW
6-Pin TDFN (derate 24.4mW/°C above +70°C) ..........1951mW
12-Pin TQFN (derate 16.9mW/°C above +70°C) ........1349mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature .....................................................+150°C
Bump Temperature (soldering) (Note 1)
Infrared (15s) ................................................................+220°C
Vapor Phase (60s) ........................................................+215°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
VCC
0.9
5.5
V
Supply Current
ICC
1
100
nA
Diode Forward Voltage
VF
IF = 10mA
0.65
0.95
V
Positive transients
VCC + 25
TA = +25°C, ±15kV
Human Body Model,
IF = 10A
Negative transients
-25
Positive transients
VCC + 60
TA = +25°C, ±8kV
Contact Discharge
(IEC 61000-4-2), IF = 24A
Negative transients
-60
Positive transients
VCC + 100
Channel Clamp Voltage
(Note 3)
VC
TA = +25°C, ±15kV
Air-Gap Discharge
(IEC 61000-4-2), IF = 45A
Negative transients
-100
V
Channel Leakage Current
TA = 0°C to +50°C (Note 4)
-1
+1
nA
Channel Input Capacitance
VCC = 5V, bias of VCC/2
5
7
pF
ESD PROTECTION
Human Body Model
±15
kV
IEC 61000-4-2
Contact Discharge
±8
kV
IEC 61000-4-2
Air-Gap Discharge
±15
kV
Note 1: The UCSP devices are constructed using a unique set of packaging techniques that impose a limit on the thermal profile the
device can be exposed to during board-level solder attach and rework. This limit permits the use of only the solder profiles
recommended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and Convection
Reflow. Preheating is required. Hand or wave soldering is not allowed.
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