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参数资料
| 型号： | MAX3355EEBC+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | IC CHARGE PUMP USB OTG 12-UCSP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 充电泵，USB |
| 输入电压： | 2.6 V ~ 5.5 V |
| 输出数： | 1 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WFBGA，WLCSP |
| 供应商设备封装： | 12-UCSP（3x4） |
| 包装： | 带卷 (TR) |
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND)
V CC , V L , V BUS , ID_IN.............................................-0.3V to +6.0V
C+..................................................................(V CC - 0.3V) to +6V
C-................................................................-0.3V to (V CC + 0.3V)
OFFVBUS , SHDN , STATUS1,
STATUS2, ID_OUT ....................................-0.3V to (V L + 0.3V)
V BUS Short Circuit to GND .........................................Continuous
Output Current (all other pins)..........................................±15mA
14-Pin TSSOP (derate 9.1mW/ ° C above +70 ° C) .........727mW
Operating Temperature Range ...........................-40 ° C to +85 ° C
Storage Temperature Range .............................-65 ° C to +150 ° C
Junction Temperature ......................................................+150 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Bump Temperature (soldering)
Infrared (15s) ...............................................................+200 ° C
Vapor Phase (20s) .......................................................+215 ° C
Continuous Power Dissipation (T A = +70 ° C)
4 x 3 UCSP (derate 6.5mW/ ° C above +70 ° C) .............520mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V CC = +2.6V to +5.5V, V L = +1.65V to V CC , C1 = 0.1μF, V CC decoupled with 1μF capacitor to GND, V L decoupled with 0.1μF
capacitor to GND, C LOAD = 1μF (min), ESR LOAD = 1 ? (max), T A = T MIN to T MAX . Typical values are at V CC = +3.0V, V L = 1.8V, T A =
+25 ° C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Supply Voltage
Logic Supply Voltage
SYMBOL
V CC
V L
CONDITIONS
MIN
2.6
1.65
TYP
MAX
5.5
V CC
UNITS
V
V
Logic Supply Current
I L
No activity on V BUS ; comparator and
reference active
100
200
μA
μA
Operating Supply Current
I CC
Device A configured, OFFVBUS = V L ,
I LOAD = 8mA, charge pump on
20
mA
Shutdown Supply Current
Thermal-Shutdown Protection
Threshold
Thermal-Shutdown Protection
Hysteresis
I CC SHDN
Device B configured, SHDN = GND
Device A configured, SHDN = GND
Device A configured, OFFVBUS = V L ,
charge pump on
Device A configured, OFFVBUS = V L ,
charge pump on
30
+150
+20
1
μA
° C
° C
LOGIC INPUTS AND OUTPUTS
STATUS1, STATUS2, ID_OUT
Output Voltage
V OH
V OL
I SOURCE = +1mA
I SINK = -1mA
2/3 x V L
0.4
V
OFFVBUS , SHDN Input Voltage
Input Leakage Current
V IH
V IL
I LKG
OFFVBUS, SHDN = GND or V L
2/3 x V L
0.4
±1
V
μA
V BUS OUTPUT VOLTAGE: DEVICE A CONFIGURED
V BUS Output Voltage
V BUS Leakage Voltage
V BUS Sink Current
I LOAD = 0 to 8mA, C LOAD = 1μF,
OFFVBUS = V L , ID_IN = GND
No load, C LOAD = 1μF, OFFVBUS = V L ,
ID_IN = GND
OFFVBUS = GND
OFFVBUS = GND, V BUS = +6.0V
4.63
4.8
5.25
200
150
V
mV
μA
2
_______________________________________________________________________________________
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