参数资料
型号: MAX44265EWT+T
厂商: Maxim Integrated Products
文件页数: 7/13页
文件大小: 0K
描述: IC AMP OP R-R 200KHZ 6WLP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 0.1 V/µs
增益带宽积: 200kHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 200µV
电流 - 电源: 4µA
电流 - 输出 / 通道: 15mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-WFBGA,WLPBGA
供应商设备封装: 6-WLP
包装: 带卷 (TR)
MAX44265
Rail-to-Rail, 200kHz Op Amp
with Shutdown in a Tiny, 6-Bump WLP
_______________________________________________________________________________________
3
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VDD = 1.8V to 3.6V
0.4
SHDN_ Logic Low
VIL
VDD = 3.6V to 5.5V
0.8
V
VDD = 1.8V to 3.6V
1.4
SHDN_ Logic High
VIH
VDD = 3.6V to 5.5V
2
V
IIL
SHDN_ = VSS (Note 2)
1
SHDN_ Input Bias Current
IIH
SHDN_ = VDD
500
nA
Output Leakage in Shutdown
IOUT(SHDN_) SHDN_ = VSS, VOUT = 0V to VDD
1
500
nA
Gain-Bandwidth Product
200
kHz
Slew Rate
0.1
V/s
AV = 1V/V
30
AV = 10V/V
250
RL = 5k, AV = 1V/V
200
Capacitive-Load Stability (See
the Driving Capacitive Loads
Section)
CLOAD
No sustained
oscillations
RISO = 1k, AV = 1V/V
100
pF
Input Voltage-Noise Density
f = 1kHz
400
nV/√Hz
Input Current-Noise Density
f = 1kHz
0.001
pA/√Hz
Settling Time
To 0.1%, VOUT = 2V step, AV = -1V/V
18
s
Delay Time to Shutdown
tSH
IDD = 5% of normal operation,
VDD = 5.5V, VSHDN_ = 5.5V to 0 step
2s
Delay Time to Enable
tEN
VOUT = 2.7V, VOUT settles to 0.1%,
VDD = 5.5V, VSHDN_ = 0 to 5.5V step
30
s
Power-Up Time
VDD = 0 to 5.5V step
5
s
ELECTRICAL CHARACTERISTICS (continued)
(VDD = 1.8V to 5.5V, VSS = 0V, VCM = 0V, VOUT = VDD/2, RL = ∞ connected to VDD/2, SHDN_ = VDD, TA = +25°C, unless otherwise
noted.) (Note 1)
ELECTRICAL CHARACTERISTICS
(VDD = 1.8V to 5.5V, VSS = 0V, VCM = 0V, VOUT = VDD/2, RL = ∞ connected to VDD/2, SHDN_ = VDD, TA = -40°C to +85°C, unless
otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
VDD
Guaranteed by PSRR test
1.8
5.5
V
Supply Current
IDD
VDD = 5.5V
5.5
A
Shutdown Supply Current
IDD(SHDN_)
SHDN_ = GND
1
A
Input Offset Voltage
VOS
±5mV
Input-Offset-Voltage
Temperature Coefficient
TCVOS
±5
V/°C
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