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参数资料
| 型号： | MAX4920BETD+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/19页 |
| 文件大小： | 0K |
| 描述： | IC CTLR OVP/OCP BATT PWR 14-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 过压和过流控制器 |
| 应用： | 手机，数码相机，媒体播放器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-WFDFN 裸露焊盘 |
| 供应商设备封装： | 14-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
MAX4919B/MAX4920B/MAX4921B
MOSFET Selection
The MAX4919B/MAX4920B/MAX4921B are designed
for use with a complementary MOSFET or single
p-channel and dual back-to-back n-channel MOSFETS.
In most situations, MOSFETs with RDS(ON) specified for
a VGS of 4.5V will work well. Also, the VDS should be
30V in order for the MOSFET to withstand the full 28V IN
range of the MAX4919B/MAX4920B/MAX4921B. Table
1 shows a selection of MOSFETs which are appropriate
for use.
IN Bypass Considerations
For most applications, bypass IN to GND with a 1F
ceramic capacitor to enable ±15kV ESD protection
(when GP1 is not utilized). If ±15kV is not required,
place a minimum 0.1F capacitor at IN to GND. If the
power source has significant inductance due to long
lead length, take care to prevent overshoots due to the
LC tank circuit and provide protection if necessary to
prevent exceeding the +30V absolute maximum rating
at IN.
BTO Bypass Capacitor Considerations
In order to guarantee a successful startup of the inter-
nal p-channel MOSFET, use a capacitance lower than
CBTO(MAX). If the load capacitance is too large, then
current may not have enough time to charge the
capacitance and the device assumes that there is a
faulty load condition. The maximum capacitive-load
value that can be driven by BTO is obtained by the fol-
lowing formula:
where CBTO is the output capacitor at BTO, VBTI is
the battery voltage, tCLIM is the minimum current-limit
blanking time, and ICLIM is the minimum forward cur-
rent-limit value.
C
It
V
BTO MAX
LIM
CLIM
BTI
() ≤
×
Battery Power-Up Logic with Overvoltage
and Overcurrent Protection
12
______________________________________________________________________________________
PART
CONFIGURATION/
PACKAGE
VGS (MAX)
(V)
VDS (MAX)
(V)
RON at 4.5V
(m
)
MANUFACTURER
30
143
(N-FET)
Si5504DC
Complementary
MOSFET/1206-8
±20
-30
290
(P-FET)
Si5902DC
Dual/1206-8
±20
30
143
(N-FET)
Si1426DH
Single/DFN-6
±20
30
115
(N-FET)
Si5435DC
Single/1206-8
±20
-30
80
(P-FET)
Vishay Siliconix
www.vishay.com
FDC6561AN
Dual/SSOT-6
±20
30
145
(N-FET)
FDG315N
Single/DFN-6
±20
30
160
(N-FET)
FDC658P
Single/SSOT-6
±20
-30
75
(P-FET)
FDC654P
Single/SSOT-6
±20
-30
125
(P-FET)
Fairchild Semiconductor
www.fairchildsemi.com
Table 1. MOSFET Suggestions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX4921BETD+ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| MAX4921BETD+T | 功能描述:电池管理 Battery Power-Up Logic RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX4924ELT+T | 功能描述:开关变换器、稳压器与控制器 Overvoltage Protector RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| MAX4925ELT+ | 制造商:Maxim Integrated Products 功能描述:OVP PROTECTOR WITH EXTERNAL PFET - Bulk |
| MAX4925ELT+T | 功能描述:开关变换器、稳压器与控制器 Overvoltage Protector RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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