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参数资料
| 型号： | MAX5054AATA/V+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 4A 20NS DL 8-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 差分 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
4A, 20ns, Dual MOSFET Drivers
Table 1. MAX5054 Truth Table
INA+/INB+
Low
Low
INA-/INB-
Low
High
OUTA/OUTB
Low
Low
V DD
MAX5054A
High
Low
High
PWM
INPUT
INA+
OUTA
High
High
Low
Table 2. MAX5055/MAX5056/MAX5057
Truth Table
ON
OFF
INA-
GND
NONINVERTING
IN_+
Low
OUT_
Low
Figure 4. Unused Input as an ON/OFF Function (1/2 MAX5054A)
Applications Information
High
IN_-
Low
INVERTING
High
OUT_
High
RLC Series Circuit
The driver’s R DS(ON) (R ON ), internal bond and lead
inductance (L P ), trace inductance (L S ), gate inductance
(L G ), and gate capacitance (C G ) form a series RLC
High Low
The logic inputs are high impedance and must not be left
circuit with a second-order characteristic equation. The
series RLC circuit has an undamped natural frequency
( ? 0 ) and a damping ratio ( ζ ) where:
floating. If the inputs are left open, OUT_ can go to an
undefined state as soon as V DD rises above the UVLO
threshold. Therefore, the PWM output from the controller
must assume proper state when powering up the device.
? 0 =
1
( L P + L S + L G ) × C G
ξ =
( L P + L S + L G )
The MAX5054 has two logic inputs per driver providing
greater flexibility in controlling the MOSFET. Use IN_+ for
noninverting logic and IN_- for inverting logic operation.
Connect IN_+ to V DD and IN_- to GND if not used.
Alternatively, the unused input can be used as an
ON/OFF function. Use IN_+ for active-low shutdown logic
and IN_- for active-high shutdown logic (see Figure 4).
See Table 1 for all possible input combinations.
Driver Output
The MAX5054–MAX5057 have low R DS(ON) p-channel
and n-channel devices (totem pole) in the output stage
R ON
2 ×
C G
The damping ratio needs to be greater than 0.5 (ideally 1)
to avoid ringing. Add a small resistor (R GATE ) in series
with the gate when driving a very low gate-charge
MOSFET, or when the driver is placed away from the
MOSFET. Use the following equation to calculate the
series resistor:
for the fast turn-on and turn-off high gate-charge switch-
ing MOSFETs. The peak source or sink current is typically
4A. The OUT_ voltage is approximately equal to V DD
when in high state and is ground when in low state. The
R GATE ≥
(L P + L S + L G )
C G
? R ON
driver R DS(ON) is lower at higher V DD , thus higher
source-/sink-current capability and faster switching
speeds. The propagation delays from the noninverting
and inverting logic inputs to outputs are matched to 2ns.
The break-before-make logic avoids any cross-conduc-
tion between the internal p- and n-channel devices, and
eliminates shoot-through currents reducing the quiescent
supply current.
L P can be approximated as 3nH and 2nH for SO and
TDFN packages, respectively. L S is on the order of
20nH/in. Verify L G with the MOSFET vendor.
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5054AATV | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:4A, 20ns, Dual MOSFET Drivers |
| MAX5054BATA | 制造商:Maxim Integrated Products 功能描述:4A 20NS DUAL MOSFET DRIVERS - Rail/Tube |
| MAX5054BATA+ | 制造商:Maxim Integrated Products 功能描述:MOSFET DRVR 4A 2-OUT LO SIDE INV/NON-INV 8TDFN EP - Rail/Tube |
| MAX5054BATA+T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5054BATA-T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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