- 您现在的位置：买卖IC网 > PDF目录20521 > MAX5055AASA+T (Maxim Integrated)IC MOSFET DRVR DUAL 8-SOIC PDF资料下载
参数资料
| 型号： | MAX5055AASA+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR DUAL 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOICN 裸露焊盘 |
| 包装： | 带卷 (TR) |
4A, 20ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V DD ...............................................................................-0.3V to +18V
INA+, INA-, INB+, INB- ...............................................-0.3V to +18V
OUTA, OUTB...................................................-0.3V to (V DD + 0.3V)
OUTA, OUTB Short-Circuit Duration ........................................10ms
Continuous Source/Sink Current at OUT_ (P D < P DMAX ) .....200mA
Continuous Power Dissipation (T A = +70°C)
8-Pin SO-EP (derate 19.2mW/°C above +70°C)… ........1538mW
8-Pin SO (derate 5.9mW/°C above +70°C)… ..................471mW
Operating Temperature Range..............................-40°C to +125°C
Storage Temperature Range .................................-65°C to +150°C
Junction Temperature ...........................................................+150°C
Lead Temperature (soldering, 10s)......................................+300°C
Soldering Temperature (reflow)............................................+260°C
8-Pin TDFN-EP (derate 18.2mW/°C above +70°C)........1454mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
8 TDFN-EP
Junction-to-Ambient Thermal Resistance ( θ JA )...............+41°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................+8°C/W
8 SO-EP
Junction-to-Ambient Thermal Resistance ( θ JA )..................+41°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................+7°C/W
8 SO
Junction-to-Ambient Thermal Resistance ( θ JA )................+132°C/W
Junction-to-Case Thermal Resistance ( θ JC ).......................+40°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = 4V to 15V, T A = -40°C to +125°C, unless otherwise noted. Typical values are at V DD = 15V and T A = +25 ° C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
V DD Operating Range
V DD
4
15
V
V DD Undervoltage Lockout
UVLO
V DD rising
3.00
3.50
3.85
V
V DD Undervoltage Lockout
Hysteresis
200
mV
V DD Undervoltage Lockout to
Output Delay
V DD rising
12
μs
I DD
INA- = INB- = V DD ,
INA+ = INB+ = 0V
(not switching)
V DD = 4V
V DD = 15V
28
40
55
75
μA
V DD Supply Current
INA- = 0V, INB+ = V DD = 15V,
I DD-SW
INA+ = INB- both channels switching at
1
2.4
4
mA
250kHz, C L = 0F
DRIVER OUTPUT (SINK)
V DD = 15V,
T A = +25°C
1.1
1.8
Driver Output Resistance Pulling
Down
R ON-N
I OUT_ = -100mA
V DD = 4.5V,
T A = +125°C
T A = +25°C
1.5
2.2
2.4
3.3
?
I OUT_ = -100mA
T A = +125°C
3.0
4.5
Peak Output Current (Sinking)
I PK-N
V DD = 15V, C L = 10,000pF
4
A
Output-Voltage Low
I OUT_ = -100mA
V DD = 4.5V
V DD = 15V
0.45
0.24
V
Latchup Protection
I LUP
Reverse current I OUT_ (Note 2)
400
mA
2
_______________________________________________________________________________________
相关PDF资料 |
PDF描述 |
|---|---|
| SMMBD7000LT1G | DIODE SWITCH DUAL 100V SOT23 |
| S332M33Z5UN63J5R | CAP CER 3300PF 1KV 20% RADIAL |
| MMBD717LT1 | DIODE SCHOTTKY 20V 200MW SOT323 |
| R0.25S12-2412/P-R | CONV DC/DC 0.25W 24V IN 12V OUT |
| RCM06DCBN-S189 | CONN EDGECARD 12POS R/A .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5055BASA | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055BASA+ | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055BASA+T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055BASA-T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5056 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:4A, 20ns, Dual MOSFET Drivers |
发布紧急采购，3分钟左右您将得到回复。