参数资料
型号: MAX5900NNETT+T
厂商: Maxim Integrated
文件页数: 2/14页
文件大小: 290K
描述: IC HOT-SWAP CONTROLLER 6-TDFN-EP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
系列: Simple Swapper™
类型: 热交换控制器
应用: 通用
内部开关:
电源电压: -9 V ~ -100 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-TDFN 裸露焊盘(3x3)
包装: 带卷 (TR)
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
2  _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
EE
= -9V to -100V, GND = 0V, ON/OFF open circuit, T
A
= -40癈 to +85癈, unless otherwise noted. Typical values are at V
EE
= -48V
and T
A
= +25癈.) (Notes 1, 2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Terminal Voltage (with respect to GND, unless otherwise noted)
V
EE,
DRAIN, PGOOD, PGOOD ............................-120V to +0.3V
ON/OFF to V
EE
.........................................................-0.3V to +4V
GATE to V
EE
......................................................... -0.3V to +12V
Current into Any Pin............................................................?mA
Continuous Power Dissipation (T
A
= +70癈)
6-Pin SOT23 (derate 9.1mW/癈 above +70癈)...........727mW
6-Pin TDFN (derate 18.2mW/癈 above +70癈) ........1454mW
Junction to Case Thermal Resistance, ?/SPAN>
JC
(TDFN) ........8.5癈/W
Maximum Junction Temperature .....................................+150癈
Storage Temperature Range.............................-60癈 to +150癈
Lead Temperature (soldering, 10s).................................+300癈
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
V
EE
-100
-9
V
Supply Current
I
GND
Measured at GND
0.5
1.3
mA
V
EE
 = -36V to -72V
7.5
9.5
11.6
V
EE
 = -100V
8
10
11.6
External Gate Drive
V
GS
V
GATE
 - V
EE
V
EE
 = -9V
6
7
V
Load Voltage Slew-Rate
Magnitude
SR
| dV
DRAIN
/dt |, C
LOAD
 = 10礔, V
EE
 = -9V to -36V
4.5
10
17
V m
Default UVLO
V
UVLO
|V
EE
| increasing
-34.5
-31.5
-28.5
V
UVLO Hysteresis
3.5
V
ON/OFF Input Resistance
R
ON/OFF
20
32
50
k&
Drain to V
EE
 Resistance
R
DVEE
466
k&
ON/OFF Reference
Threshold
V
ON/OFF
(V
ON/OFF
 - V
EE
) increasing
1.14
1.26
1.38
V
ON/OFF Hysteresis
140
mV
Start Delay (Note 3)
t
ON
150
300
500
ms
N   FF   ff D  l
N
4
t
OFF
V
GATE
 - V
EE
 < 1V
9
20
32
ms
MAX590_ _AEUT
170
200
240
MAX590_ _BEUT
265
300
345
Circuit-Breaker
Threshold
V
CB
V
DRAIN
 - V
EE
MAX590_ _CEUT
365
400
455
mV
C
GATE
 = 1nF
1.5
3
C
GATE
 = 4.7nF
2.5
4.5
Circuit-Breaker Delay
(Note 5)
t
CB
(V
DRAIN
 - V
EE
) > V
CB
until (V
GATE
 - V
EE 
) <
1V, 200mV overdrive
step
C
GATE
 = 10nF
4
6
Restart Delay (Note 3)
t
RS
After circuit-breaker event, MAX590_A_EUT only
150
300
500
ms
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