参数资料
型号: MAX5901AAETT+T
厂商: Maxim Integrated
文件页数: 5/14页
文件大小: 290K
描述: IC HOT-SWAP CONTROLLER 6-TDFN-EP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
系列: Simple Swapper™
类型: 热交换控制器
应用: 通用
内部开关:
电源电压: -9 V ~ -100 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-TDFN 裸露焊盘(3x3)
包装: 带卷 (TR)
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
_______________________________________________________________________________________   5
Detailed Description
The MAX5900/MAX5901 are integrated hot-swap con-
troller ICs contained in 6-pin SOT23/TDFN packages.
They allow a board to be safely hot plugged into a live
backplane without causing a glitch on the power-sup-
ply rail. They are well suited for -48V telecom power
systems, allowing a cost-effective, simple, and com-
pact design. The MAX5900/MAX5901 operate from -9V
to -100V to cover the standard telecom voltage range,
and to serve more generalized applications. These
devices require only an external n-channel power MOS-
FET to provide hot-swap control. Figure 1 shows a
functional diagram of the MAX5900/MAX5901.
The MAX5900/MAX5901 control an external n-channel
power MOSFET placed in the negative power-supply
pathway. When power is first applied, the MAX5900/
MAX5901 keep the MOSFET turned off. The MAX5900/
MAX5901 hold the MOSFET off indefinitely if ON/OFF is
held low, if the supply voltage is below the undervolt-
age lockout level, or if the die temperature exceeds
+125癈. If none of these conditions exist for 300ms
(typ), the MAX5900/MAX5901 begin to gradually turn
on the MOSFET. During this turn-on phase, the
MAX5900/MAX5901 slowly enhance the MOSFET,
Figure 1. Functional Diagram
V
EE
V
EE
ON/OFF
GND
MAX5900
MAX5901
GATE
34.5k&*
466k&*
1k&*
828k&*
DRAIN
*RELATIVE TOLERANCE ?%, ABSOLUTE TOLERANCE ?0% TYPICAL.
CONTROL
LOGIC
PGOOD
(PGOOD)
( ) ARE FOR THE MAX5901 ONLY.
V
EE
3V
N
PIN
MAX5900
MAX5901
NAME
FUNCTION
1
1
V
EE
Negative Supply Voltage Input and External n-Channel MOSFET Source
Connection
2
2
DRAIN
Drain Sense Input for External n-Channel MOSFET. Connect DRAIN as close as
possible to the MOSFETs drain and use wide circuit traces to assure good
thermal coupling between the MAX5900/MAX5901 and the MOSFET (see the
Layout Guidelines section).
3
3
GATE
Gate Drive Output for External n-Channel MOSFET
4
4
GND
Ground Connection.
5

PGOOD
Power-Good Output. PGOOD is an n-channel, open-drain, active-low output,
referenced to V
EE
.

5
PGOOD
Power-Good Output. PGOOD is an n-channel, open-drain, active-high output,
referenced to V
EE
.
6
6
ON/OFF
ON/OFF Control Input. ON/OFF is referenced to V
EE
. Drive ON/OFF above 1.38V
or leave unconnected to enable the device. Drive ON/OFF below 1V to disable
the device. ON/OFF is also used to adjust the UVLO threshold. See the Under-
voltage Lockout section in the Applications Information. Internally clamped to
nominally 3V through a 1k& resistor (see Figure 1).


EP
Exposed Pad (TDFN only). Connect to V
EE
.
Pin Description
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