参数资料
型号: MAX5929DEEG+T
厂商: Maxim Integrated
文件页数: 19/23页
文件大小: 340K
描述: IC HOT SWAP CTLR QUAD 24QSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
类型: 热交换控制器
应用: 通用
内部开关:
电源电压: 1 V ~ 15 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 24-SSOP(0.154",3.90mm 宽)
供应商设备封装: 24-QSOP
包装: 带卷 (TR)
Startup Sequence
There are two ways of completing the startup
sequence. Case A describes a startup sequence that
slowly turns on the MOSFETs by limiting the gate
charge. Case B uses the current-limiting feature and
turns on the MOSFETs as fast as possible while still
preventing a high inrush current. The output voltage
ramp-up time (t
ON
) is determined by the longer of the
two timings, case A and case B. Set the startup timer
(t
START
) to be longer than t
ON
to guarantee enough
time for the output voltage to settle.
Case A: Slow Turn-On (Without Current Limit)
There are two ways to turn on the MOSFETs without
reaching the fast-comparator current limit:
"  If the board capacitance (C
BOARD
) is small, the
inrush current is low.
"  If the gate capacitance is high, the MOSFETs turn
on slowly.
In both cases, the turn-on time is determined only by
the charge required to enhance the MOSFET. The
small 100礎 gate-charging current effectively limits
the output voltage dv/dt. Connecting an external
capacitor between GATE and GND extends the turn-
on time. The time required to charge/discharge a
MOSFET is as follows:
where:
C
GATE
is the external gate to ground capacitance
(Figure 9),
GATE
is the change in gate charge,
Q
GATE
is the MOSFET total gate charge,
I
GATE
is the gate-charging/discharging current.
In this case, the inrush current depends on the MOSFET
gate-to-drain capacitance (C
rss
) plus any additional
capacitance from GATE to GND (C
GATE
), and on any
load current (I
LOAD
) present during the startup period.
Example: Charging and discharging times using the
Fairchild FDB7030L MOSFET
If V
IN1
= 5V, GATE1 charges up to 10.4V (V
IN1
+
V
DRIVE
), and therefore, 擵
GATE
= 10.4V. The manufac-
turers data sheet specifies that the FDB7030L has
approximately 60nC of gate charge and C
rss
= 600pF.
The MAX5927A/MAX5929AMAX5929D have a 100礎
gate-charging current and a 3mA/50mA normal/strong
discharging current. C
BOARD
= 6礔 and the load does
not draw any current during the startup period. With no
gate capacitor, the inrush current, charge, and dis-
charge times are:
I
F
pF
A
A
I
V
nC
A
ms
t
V
nC
mA
ms
t
V
nC
mA
s
INRUSH
CHARGE
DISCHARGE
DISCHARGE STRONG
=
?/DIV>
+
?/DIV>
+
=
=
?/DIV>
+
?/DIV>
=
=
?/DIV>
+
=
=
?/DIV>
+
=
6
600
0
100
0
1
0
10 4
60
100
0 6
0
10 4
60
3
0 02
0
10 4
60
1 2
    
             
         .        
        .
         .        
        .
         .        
        .
(
)
?/DIV>
?/DIV>
I
C
C
C
I
I
INRUSH
BOARD
rss
GATE
GATE
LOAD
=
+
?/DIV>
+
 
 
 
t
C
V
Q
I
GATE
GATE
GATE
ATE
=
?/DIV>
+
?/DIV>
Low-Voltage, Quad, Hot-Swap
Controllers/Power Sequencers
_____________________________________________________________  ______________________________________________________  ________________________________  ____  _____________________   19
Figure 10. Adjustable Undervoltage Lockout
GATE_
SENSE_
V
TURN-ON
 -
(R
2
 x R
1
) V
ON
,
 TH
 
R
2
ON_
V
IN
IN_
R
1
R
2
MAX5927A
MAX5929A
MAX5929B
MAX5929C
MAX5929D
Figure 9. Operating with an External Gate Capacitor
GATE_
SENSE_
GND
ON_
R
SENSE_
V
OUT_
C
GATE
C
BOARD
V
IN_
IN_
R
PULLUP
STAT_
MAX5927A
MAX5929A
MAX5929B
MAX5929C
MAX5929D
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