参数资料
型号: MAX5944ESE+T
厂商: Maxim Integrated
文件页数: 8/15页
文件大小: 0K
描述: IC FW CURR LIMITER DUAL 16-SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
应用: FireWire? 应用程序
FET 型: N 沟道
输出数: 2
内部开关:
延迟时间 - 关闭: 100ns
电源电压: 7.5 V ~ 37 V
电流 - 电源: 1.3mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 带卷 (TR)
Dual FireWire Current Limiter and Low-Drop
ORing Switch Controller
Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NAME
INA
ONA
FAULTA
ONQ1
OUTB
GATE2B
GATE1B
SENSEB
INB
ONB
FAULTB
GND
OUTA
GATE2A
GATE1A
SENSEA
FUNCTION
Channel A Input Power and Current-Sense Positive Input. Connect INA to the other end of the current-
sense resistor and to the power source (see the Typical Operating Circuit ).
Channel A On/Off Control Input. ONA sets the undervoltage lockout threshold and resets the part after a
fault latch. Drive ONA high to enable the device. Drive ON_ low to disable the device. Connect ONA to INA
for the default undervoltage lockout threshold. Connect a resistor-divider from INA to ONA and to GND to
program the desired undervoltage lockout threshold.
Channel A Current-Fault Status Output. FAULTA is an open-drain output. FAULTA goes low after a current-
limit fault has exceeded the 2ms (typ) current-limit timeout period (see the FAULT_ section ).
ORing Switch Manual Turn-On Input. Drive ONQ1 low to enable power-supply ORing for channels A and B.
Drive ONQ1 high to set GATE1A to GATE1B high to allow reverse-current flow. ONQ1 is disabled for the
respective channel when V IN is below the UVLO threshold, V ON_ is below the undervoltage lockout
threshold and after a current-limit fault.
Channel B Output-Voltage Sense. Connect to the output.
Channel B Current-Limiter Switch Gate-Drive Output. Referenced to OUTB. Connect GATE2B to the gate of
the 2nd n-channel MOSFET. GATE2B is a charge pump with a 50μA pullup current to 5.5V (typ) above
OUTB when active (see the Typical Operating Circuit ).
Channel B ORing Switch Gate-Drive Output. Referenced to SENSEB. Connect GATE1B to the gate of the
1st n-channel MOSFET. GATE1B is a charge pump with a 50μA pullup current to 5.5V (typ) above SENSEB
when active (see the Typical Operating Circuit ).
Channel B Current-Sense Negative Input. Connect current-sense resistor, R SENSE , from INB to SENSEB.
Channel B Input Power and Current-Sense Positive Input. Connect INB to the other end of the current-
sense resistor and to the power source.
Channel B On/Off Control Input. ONB sets the undervoltage lockout threshold and resets the part after a
fault latch. Drive ONB high to enable the device. Drive ON_ low to disable the device. Connect ONB to INB
for the default undervoltage lockout threshold. Connect a resistor-divider from INB to ONB and to GND to
program the desired undervoltage lockout threshold.
Channel B Current-Fault Status Output. FAULTB is an open-drain output. FAULTB goes low after a current-
limit fault has exceeded the 2ms (typ) current-limit timeout period (see the FAULT_ section ).
Ground
Channel A Output-Voltage Sense. Connect to the output.
Channel A Current-Limiter Switch Gate-Drive Output. Referenced to OUTA. Connect GATE2A to the gate of
the 2nd n-channel MOSFET. GATE2A is a charge pump with a 50μA pullup current to 5.5V (typ) above
OUTA when active.
Channel A ORing Switch Gate-Drive Output. Referenced to SENSEA. Connect GATE1A to the gate of the
1st n-channel MOSFET. GATE1A is a charge pump with a 50μA pullup current to 5.5V (typ) above SENSEA
when active.
Channel A Current-Sense Negative Input. Connect current-sense resistor, R SENSEA , from INA to SENSEA
(see the Typical Operating Circuit ).
8
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