参数资料
型号: MAX5965BEAX+
厂商: Maxim Integrated
文件页数: 22/54页
文件大小: 1334K
描述: IC PSE CTRLR FOR POE 36SSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 30
类型: 以太网供电控制器(PoE)
应用: IP 电话,LAN 网络供电,网络路由器和交换机
内部开关:
电源电压: 2.4 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 36-BSOP(0.295",7.50mm 宽)
供应商设备封装: 36-SSOP
包装: 管件
High-Power, Quad, Monolithic, PSE Controllers
for Power over Ethernet
22   ______________________________________________________________________________________
Table 3. Automatic ICUT Programming
CL_DISC
PORT
CLASSIFICATION
RESULT
ENx_CL6   EN_HP_ALL  EN_HP_CL6   EN_HP_CL5   EN_HP_CL4
RESULTING ICUT
REGISTER BITS
0
Any
X
X
X
X
X
User programmed
1
1
X
X
X
X
X
ICUT = 110
1
2
X
X
X
X
X
ICUT = 111
1
0, 3
X
X
X
X
X
ICUT = 000
1
4, 5
X
0
X
X
X
ICUT = 000
1
5
X
1
X
1
X
ICUT = R24h[6:4]
1
5
X
1
X
0
X
ICUT = 000
1
4
X
1
X
x
1
ICUT = R24h[6:4]
1
4
X
1
X
X
0
ICUT = 000
1
6 or Illegal
0
X
X
X
X

1
6 or Illegal
1
1
1
X
X
(See Table 35a)
1
6 or Illegal
1
1
0
X
X
ICUT = 000
1
6 or Illegal
1
0
X
X
X
ICUT = 000
MOSFET Gate Driver
Connect the gate of the external n-channel MOSFET to
GATE_. An internal 50礎 current source pulls GATE_ to
(V
EE
+ 10V) to turn on the MOSFET. An internal 40礎
current source pulls down GATE_ to V
EE
to turn off the
MOSFET.
The pullup and pulldown current controls the maximum
slew rate at the output during turn-on or turn-off. Use
the following equation to set the maximum slew rate:
where C
GD
is the total capacitance between GATE and
DRAIN of the external MOSFET. Current limit and the
capacitive load at the drain control the slew rate during
startup.   During   current-limit   regulation,   the
MAX5965A/MAX5965B manipulate the GATE_ voltage
to control the voltage at SENSE_ (V
RS
). A fast pulldown
activates if V
RS
overshoots the limit threshold
(V
SU_LIM
). The fast pulldown current increases with the
amount of overshoot. The maximum fast pulldown cur-
rent is 100mA.
During turn-off, when the GATE_ voltage reaches a
value lower than 1.2V, a strong pulldown switch is acti-
vated to keep the MOSFET securely off.


V
t
I
C
OUT
GATE
GD
=
Figure 3a. Foldback Current Characteristics
48V
28V
V
SU_LIM
V
SU_LIM
 / 3
(V
RS
 - V
EE
)
(V
OUT_
 - V
EE
)
Figure 3b. Foldback Current Characteristics for High-Power Mode
48V
10V
V
SU_LIM
V
TH_FB
(V
RS
 - V
EE
)
(V
OUT_
 - V
EE
)
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