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| 型号： | MAX6397ZATA+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 14/18页 |
| 文件大小： | 0K |
| 描述： | IC SW OVERVOLT PROT 8-TDFN |
| 其它有关文件： | Automotive Product Guide |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 电压 - 工作： | 72V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 1.45W |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
Overvoltage Protection Switch/Limiter
Controllers Operate Up to 72V
180
170
I OUT = 0
T A = +125 ° C
THERMAL SHUTDOWN
During ? t2, C OUT loses charge through the output load.
The voltage across C OUT ( ? V2) decreases until the
MOSFET reaches its V GS(TH) threshold and can be
approximated using the following formula:
C GATE = 0
160
150
? V 2 = I OUT
? t 2
C OUT
140
C GATE = In F
C GATE = 10nF
Once the MOSFET V GS ( TH ) is obtained, the slope of the
output voltage rise is determined by the MOSFET Q G
charge through the internal charge pump with respect
130
120
1
C GATE = ADDITIONAL CAPACITANCE
FROM GATE TO GND
10 100 1000
to the drain potential. The time for the OUT voltage to
rise again to the overvoltage threshold can be approxi-
mated using the following formula:
OUTPUT CAPACITANCE ( μ F)
Figure 12. Junction Temperature vs. C OUT
? t 3 ?
Q GD
V GS _ QGD
×
? V OUT
I GATE
When OUT exceeds the adjusted overvoltage threshold,
an internal GATE pulldown current is enabled until OUT
drops by 5%. The capacitance at OUT is discharged by
the internal current sink and the external OUT load cur-
rent. The discharge time ( ? t1) is approximately:
where ? V OUT = ( V OV x 0.05) + ? V2.
The total period of the overvoltage waveform can be
summed up as follows:
t OVP = ? t1 + ? t2 + ? t3
The MAX6397/MAX6398 dissipate the most power dur-
? t 1 = C OUT
V OV × 0 . 05
I OUT + I GATEPD
ing an overvoltage event when I OUT = 0 (C OUT is dis-
charged only by the internal current sink). The maximum
power dissipation can be approximated using the follow-
where V OV is the adjusted overvoltage threshold, I OUT
ing equation:
is the external load current and I GATEPD is the GATE’s
internal 100mA (typ) pulldown current.
When OUT falls 5% below the overvoltage threshold
P DISS = V OV × 0 . 975 × I GATEPD ×
? t 1
? t OVP
point, the internal current sink is disabled and the
MAX6397/MAX6398 ’s internal charge pump begins
recharging the external GATE voltage. The OUT volt-
age continues to drop due to the external OUT load
current until the MOSFET gate is recharged. The time
needed to recharge GATE and re-enhance the external
nFET is approximately:
V GS ( TH ) + V F
? t 2 = C ISS
I GATE
where C ISS is the MOSFET’s input capacitance, V GS(TH)
is the MOSFET’s gate-to-source threshold voltage, V F is
the internal clamp diode forward voltage (V F = 1.5V typ),
and I GATE is the MAX6397/MAX6398 charge-pump cur-
rent (75μA typ).
The die temperature (T J ) increase is related to θ JC
(8.3°C/W and 8.5°C/W for the MAX6397 and MAX6398,
respectively) of the package when mounted correctly
with a strong thermal contact to the circuit board. The
MAX6397/MAX6398 thermal shutdown is governed by
the equation:
T J = T A + P DISS x ( θ JC + θ CA) < 170°C
(typical thermal-shutdown temperature)
For the MAX6397, the power dissipation of the internal
linear regulator must be added to the overvoltage pro-
tection circuit power dissipation to calculate the die
temperature. The linear regulator power dissipation is
calculated using the following equation:
P REG = (V IN – V REG ) (I REG )
For example, using an IRFR3410 100V n-channel
MOSFET, Figure 12 illustrates the junction temperature
vs. output capacitor with I OUT = 0, T A = +125°C,
V OV < 16V,V F = 1.5V, I GATE = 75mA, and I GATEPD =
100mA. Figure 12 shows the relationship between output
capacitance versus die temperature for the conditions
listed above.
14
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