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参数资料
| 型号： | MAX668EUB-T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR PWM HYBRID 10-UMAX |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| PWM 型： | 电流模式，混合 |
| 输出数： | 1 |
| 频率 - 最大： | 575kHz |
| 占空比： | 94% |
| 电源电压： | 3 V ~ 28 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 包装： | 带卷 (TR) |
MAX668/MAX669
1.8V to 28V Input, PWM Step-Up
Controllers in μMAX
Table 2. Bootstrapped and Non-Bootstrapped Configurations
CONFIGURATION
FIGURE
USE
WITH:
INPUT
VOLTAGE
RANGE* (V)
OUTPUT
VOLTAGE
RANGE (V)
COMMENTS
Connect V CC to V OUT . Provides maximum external
High-Voltage,
Bootstrapped
Figure
2
MAX669
1.8 to 28
3V to 28
FET gate drive for low-voltage (Input <3V) to high-
voltage (output >5.5V) boost circuits. V OUT cannot
exceed 28V.
Low-Voltage,
Bootstrapped
High-Voltage,
Non-Bootstrapped
Figure
3
Figure
4
MAX669
MAX668
1.8 to 5.5
3 to 28
2.7 to 5.5
V IN to ∞
Connect V OUT to V CC and LDO . Provides maxi-
mum possible external FET gate drive for low-volt-
age designs, but limits V OUT to 5.5V or less.
Connect V IN to V CC . Provides widest input and out-
put range, but external FET gate drive is reduced for
V IN below 5V.
Connect V IN to V CC and LDO . FET gate-drive
Low-Voltage,
Non-Bootstrapped
Figure
5
MAX668
2.7 to 5.5
V IN to ∞
amplitude = V IN for logic-supply (input 3V to 5.5V) to
high-voltage (output >5.5V) boost circuits. IC oper-
ating power is less than in Figure 4, since IC current
does not pass through the LDO regulator.
Connect V CC and LDO to a separate supply
Extra IC supply,
Non-Bootstrapped
None
MAX668
Not
Restricted
V IN to ∞
(V BIAS ) that powers only the IC . FET gate-drive
amplitude = V BIAS . Input power source (V IN) and
output voltage range (V OUT ) are not restricted,
except that V OUT must exceed V IN .
* For standard step-up DC-DC circuits (as in Figures 2, 3, 4, and 5), regulation cannot be maintained if V IN exceeds V OUT . SEPIC
and transformer-based circuits do not have this limitation.
In addition to the configurations shown in Table 2, the
following guidelines may help when selecting a config-
uration:
1) If V IN is ever below 2.7V, V CC must be boot-
strapped to V OUT and the MAX669 must be used. If
V OUT never exceeds 5.5V, LDO may be shorted to
V CC and V OUT to eliminate the dropout voltage of
the LDO regulator.
2) If V IN is greater than 3.0V, V CC can be powered
from V IN , rather than from V OUT (non-bootstrapped).
This can save quiescent power consumption, espe-
cially when V OUT is large. If V IN never exceeds
5.5V, LDO may be shorted to V CC and V IN to elimi-
nate the dropout voltage of the LDO regulator.
12
3) If V IN is in the 3V to 4.5V range (i.e., 1-cell Li-Ion or
3-cell NiMH battery range), bootstrapping V CC from
V OUT , although not required, may increase overall
efficiency by increasing gate drive (and reducing
FET resistance) at the expense of quiescent power
consumption.
4) If V IN always exceeds 4.5V, V CC should be tied to
V IN , since bootstrapping from V OUT does not
increase gate drive from EXT but does increase
quiescent power dissipation.
Maxim Integrated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX668EVKIT | 功能描述:电源管理IC开发工具 Evaluation Kit for the MAX668 MAX669 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX668EVKIT+ | 功能描述:电源管理IC开发工具 Evaluation Kit for the MAX668 MAX669 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX66901-K00# | 功能描述:射频识别变换器工具 MAX66901 RF Eval Kit RoHS:否 制造商:Olimex Ltd. 产品:RFID Readers 用于:ISO15693 |
| MAX66902-K00# | 功能描述:射频识别变换器工具 HF DEVELOPER KIT RoHS:否 制造商:Olimex Ltd. 产品:RFID Readers 用于:ISO15693 |
| MAX66903-K00 | 功能描述:射频识别变换器工具 MAX6100/20/40 Eval Kit RoHS:否 制造商:Olimex Ltd. 产品:RFID Readers 用于:ISO15693 |
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