参数资料
型号: MAX668EUB
厂商: Maxim Integrated Products
文件页数: 15/18页
文件大小: 0K
描述: IC REG CTRLR PWM HYBRID 10-UMAX
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
PWM 型: 电流模式,混合
输出数: 1
频率 - 最大: 575kHz
占空比: 94%
电源电压: 3 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
包装: 管件
其它名称: Q1513668
MAX668/MAX669
1.8V to 28V Input, PWM Step-Up
Controllers in μMAX
not be adequate for low output voltage ripple. Since
output ripple in boost DC-DC designs is dominated by
capacitor equivalent series resistance (ESR), a capaci-
tance value 2 or 3 times larger than C OUT(MIN) is typi-
cally needed. Low-ESR types must be used. Output
ripple due to ESR is:
V RIPPLE(ESR) = I LPEAK x ESR COUT
Input Capacitor
The input capacitor (C IN ) in boost designs reduces the
current peaks drawn from the input supply and reduces
noise injection. The value of C IN is largely determined
by the source impedance of the input supply. High
source impedance requires high input capacitance,
particularly as the input voltage falls. Since step-up DC-
DC converters act as “constant-power” loads to their
input supply, input current rises as input voltage falls.
Consequently, in low-input-voltage designs, increasing
C IN and/or lowering its ESR can add as many as five
percentage points to conversion efficiency. A good
starting point is to use the same capacitance value for
C IN as for C OUT .
Bypass Capacitors
In addition to C IN and C OUT , three ceramic bypass
capacitors are also required with the MAX668/MAX669.
Bypass REF to GND with 0.22μF or more. Bypass LDO
to GND with 1μF or more. And bypass V CC to GND with
0.1μF or more. All bypass capacitors should be located
as close to their respective pins as possible.
Compensation Capacitor
Output ripple voltage due to C OUT ESR affects loop
stability by introducing a left half-plane zero. A small
capacitor connected from FB to GND forms a pole with
the feedback resistance that cancels the ESR zero. The
optimum compensation value is:
In bootstrapped configurations with the MAX668 or
MAX669, there may be circumstances where full load
current can only be applied after the circuit has started
and the output is near its set value. As the input voltage
drops, this limitation becomes more severe. This char-
acteristic of all bootstrapped designs occurs when the
MOSFET gate is not fully driven until the output voltage
rises. This is problematic because a heavily loaded out-
put cannot rise until the MOSFET has low on-resis-
tance. In such situations, low-threshold FETs (V TH <
V IN(MIN) ) are the most effective solution. The Typical
Operating Characteristics section shows plots of start-
up voltage versus load current for a typical boot-
strapped design.
Layout Considerations
Due to high current levels and fast switching waveforms
that radiate noise, proper PC board layout is essential.
Protect sensitive analog grounds by using a star ground
configuration. Minimize ground noise by connecting
GND, PGND, the input bypass-capacitor ground lead,
and the output-filter ground lead to a single point (star
ground configuration). Also, minimize trace lengths to
reduce stray capacitance, trace resistance, and radiat-
ed noise. The trace between the external gain-setting
resistors and the FB pin must be extremely short, as
must the trace between GND and PGND.
Application Circuits
Low-Voltage Boost Circuit
Figure 3 shows the MAX669 operating in a low-voltage
boost application. The MAX669 is configured in the
bootstrapped mode to improve low input voltage per-
formance. The IRF7401 N-channel MOSFET was select-
ed for Q1 in this application because of its very low
0.7V gate threshold voltage (V GS ). This circuit provides
a 5V output at greater than 2A of output current and
C FB = C OUT x
ESR COUT
(R2 x R3) / (R2 + R3)
operates with input voltages as low as 1.8V. Efficiency
is typically in the 85% to 90% range.
where R2 and R3 are the feedback resistors (Figures 2,
3, 4, and 5). If the calculated value for C FB results in a
non-standard capacitance value, values from 0.5C FB to
1.5C FB will also provide sufficient compensation.
Applications Information
Starting Under Load
In non-bootstrapped configurations (Figures 4 and 5),
the MAX668 can start up with any combination of out-
put load and input voltage at which it can operate when
already started. In other words, there are no special
limitations to start-up in non-bootstrapped circuits.
Maxim Integrated
+12V Boost Application
Figure 5 shows the MAX668 operating in a 5V to 12V
boost application. This circuit provides output currents
of greater than 1A at a typical efficiency of 92%. The
MAX668 is operated in non-bootstrapped mode to mini-
mize the input supply current. This achieves maximum
light-load efficiency. If input voltages below 5V are
used, the IC should be operated in bootstrapped mode
to achieve best low-voltage performance.
4-Cell to +5V SEPIC Power Supply
Figure 6 shows the MAX668 in a SEPIC (single-ended
primary inductance converter) configuration. This con-
figuration is useful when the input voltage can be either
15
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相关代理商/技术参数
参数描述
MAX668EUB 制造商:Maxim Integrated Products 功能描述:PWM STEP UP CONTROLLER SMD SOIC10
MAX668EUB+ 功能描述:电流型 PWM 控制器 1.8V to 28V Step-Up RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14
MAX668EUB+T 功能描述:电流型 PWM 控制器 1.8V to 28V Step-Up RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14
MAX668EUB-T 功能描述:电流型 PWM 控制器 1.8V to 28V Step-Up RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14
MAX668EVKIT 功能描述:电源管理IC开发工具 Evaluation Kit for the MAX668 MAX669 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V