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参数资料
| 型号： | MAX6878ETG+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 14/24页 |
| 文件大小： | 0K |
| 描述： | IC SEQUENCE/SUPERVISOR 24TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 序列发生器 |
| 监视电压数目： | 2 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 复位超时： | 可调节/可选择 |
| 电压 - 阀值： | 可调节/可选择 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-WFQFN 裸露焊盘 |
| 供应商设备封装： | 24-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
Dual-/Triple-Voltage, Power-Supply
Trackers/Sequencers/Supervisors
Pin Description (continued)
MAX6877
14
PIN
MAX6878
14
MAX6879
—
NAME
PG/ RST
FUNCTION
Power-Good Output, Open-Drain. PG_ RST asserts high t TIMEOUT after all
OUT_ voltages exceed the V TH_PG thresholds.
Tracking Fault Alert Output, Active Low, Open-Drain. FAULT asserts low if a
15
15
10
FAULT
tracking failure is present for longer than the selected fault period or if
tracking voltages fail by more than ±250mV. FAULT asserts low if any OUT_
falls below the corresponding IN_ voltage.
16
—
—
OUT3
Channel 3 Monitored Output Voltage. Connect OUT3 to the source of an n-
channel FET. A fault condition activates a 100 ? pulldown to ground.
Gate Drive for External n-Channel FET. An internal charge pump boosts
17
—
—
GATE3
GATE3 to V IN3 + 5V to fully enhance the external n-channel FET when power-
up is complete.
18
18
11
OUT2
Channel 2 Monitored Output Voltage. Connect OUT2 to the source of an
n-channel FET. A fault condition activates a 100 ? pulldown to ground.
Gate Drive for External n-Channel FET. An internal charge pump boosts
19
19
12
GATE2
GATE2 to V IN2 + 5V to fully enhance the external n-channel FET when power-
up is complete.
20
20
13
OUT1
Channel 1 Monitored Output Voltage. Connect OUT1 to the source of an
n-channel FET. A fault condition activates a 100 ? pulldown to ground.
Gate Drive for External n-Channel FET. An internal charge pump boosts
21
21
14
GATE1
GATE1 to V IN1 + 5V to fully enhance the external n-channel FET when power-
up is complete.
22
—
—
IN3
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the internal
undervoltage lockout (V ABP = 2.7V) to enable the tracking or sequencing
functionality. Each IN_ input is simultaneously monitored by SET_ inputs to
23
23
15
IN2
ensure all supplies have stabilized before power-up is enabled. If IN_ is
connected to ground or left unconnected and SET_ is above 0.5V, then no-
24
EP
24
EP
16
EP
IN1
EP
sequencing control is performed on that channel. Each IN_ is internally
pulled down by a 100k ? resistor.
Exposed Paddle. Connect exposed paddle to ground.
14
______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX6879ETE | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6879ETE+ | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6879ETE+T | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6879ETE-T | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX687CPA | 功能描述:低压差稳压器 - LDO High-Accuracy LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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