参数资料
型号: MAX766ESA+T
厂商: Maxim Integrated Products
文件页数: 8/12页
文件大小: 0K
描述: IC REG INV -15V/ADJ 105MA 8SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
类型: 反相
输出类型: 两者兼有
输出数: 1
输出电压: -15V,-1 V ~ -16 V
输入电压: 3 V ~ 16 V
频率 - 开关: 300kHz
电流 - 输出: 105mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
供应商设备封装: 8-SOIC
-5V/-12V/-15V or Adjustable,
High-Efficiency, Low I Q DC-DC Inverters
FB
COMPARATOR
REF
MAX764
MAX765
SHDN
ERROR
MAX766
COMPARATOR
OUT
V+
N
1.5V
REFERENCE
V+
Q
TRIG
ONE-SHOT
FROM V+
S
Q
P
TRIG
ONE-SHOT
Q
R
CURRENT
COMPARATOR
FROM OUT
LX
0.2V
0.1V
CURRENT
CONTROL CIRCUITS
(FULL
CURRENT)
(HALF
CURRENT)
FROM V+
GND
Figure 1. Block Diagram
_______________Detailed Description
Operating Principle
The MAX764/MAX765/MAX766 are BiCMOS, inverting,
switch-mode power supplies that provide fixed outputs
of -5V, -12V, and -15V, respectively; they can also be
set to any desired output voltage using an external
resistor divider. Their unique control scheme combines
the advantages of pulse-frequency modulation (pulse
skipping) and pulse-width modulation (continuous puls-
ing). The internal P-channel power MOSFET allows
peak currents of 0.75A, increasing the output current
capability over previous pulse-frequency-modulation
(PFM) devices. Figure 1 shows the MAX764/MAX765/
MAX766 block diagram.
The MAX764/MAX765/MAX766 offer three main
improvements over prior solutions:
1) They can operate with miniature (less than 5mm
diameter) surface-mount inductors, because of their
300kHz switching frequency.
2) The current-limited PFM control scheme allows efficien-
cies exceeding 80% over a wide range of load currents.
3) Maximum quiescent supply current is only 120μA.
Figures 2 and 3 show the standard application circuits
for these devices. In these configurations, the IC is
powered from the total differential voltage between the
input (V+) and output (V OUT ). The principal benefit of
this arrangement is that it applies the largest available
signal to the gate of the internal P-channel power MOS-
FET. This increased gate drive lowers switch on-resis-
tance and increases DC-DC converter efficiency.
Since the voltage on the LX pin swings from V+ (when the
switch is ON) to I V OUT I plus a diode drop (when the
8
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