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参数资料
| 型号： | MAX8508ETE+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | IC DC-DC CONV PWM 16-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 转换器，WCDMA |
| 输入电压： | 2.6 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 0.75 V ~ 3.4 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WQFN 裸露焊盘 |
| 供应商设备封装： | 16-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
PWM Step-Down DC-DC Converters with 75m ?
Bypass FET for WCDMA and cdmaOne Handsets
ABSOLUTE MAXIMUM RATINGS
BATTP, BATT, OUT, SHDN , SKIP , HP, REFIN,
FB to GND ...........................................................-0.3V to +6V
PGND to GND .......................................................-0.3V to +0.3V
BATT to BATTP......................................................-0.3V to +0.3V
OUT, COMP, REF to GND.......................-0.3V to (V BATT + 0.3V)
LX Current (Note 1) ...............................................................1.6A
Continuous Power Dissipation (T A = +70°C)
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1.349W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
OUT Current (Note 1)............................................................3.2A
Output Short-Circuit Duration.....................................Continuous
Note 1: LX has internal clamp diodes to PGND and BATT. Applications that forward bias these diodes should take care not to exceed
the IC’s package power-dissipation limits.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V BATT = V BATTP = 3.6V, SHDN = SKIP = BATT, HP = GND, V REFIN = 1.932V (MAX8506), V REFIN = 1.70V (MAX8507),
C REF = 0.22μF, T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.) (Note 2)
PARAMETER
Input BATT Voltage
Undervoltage Lockout Threshold
V BATT rising
CONDITIONS
MIN
2.6
2.150
TYP
2.35
MAX
5.5
2.575
UNITS
V
V
Undervoltage Lockout Hysteresis
40
mV
Quiescent Current
Quiescent Current in Dropout
Shutdown Supply Current
SKIP = GND (normal mode)
SKIP = BATT, 1MHz switching
HP = BATT
SHDN = GND
V REFIN = 1.932V, I OUT = 0 to 600mA (MAX8506)
3.375
180
1750
775
0.1
3.40
250
1000
5
3.425
μA
μA
μA
OUT Voltage Accuracy
OUT Input Resistance
REFIN Input Current
REFIN to OUT Gain
V REFIN = 0.426V, I OUT = 0 to 30mA (MAX8506)
V REFIN = 1.700V, I OUT = 0 to 600mA (MAX8507)
V REFIN = 0.375V, I OUT = 0 to 30mA (MAX8507)
MAX8506
MAX8507
MAX8506
MAX8507
0.740
3.375
0.740
250
275
-1
0.75
3.40
0.75
485
535
0.1
1.76
2.00
0.760
3.425
0.760
+1
V
k ?
μA
V/V
Reference Voltage
Reference Load Regulation
Reference Bypass Capacitor
10μA < I REF < 100μA
1.225
0.1
1.25
2.5
0.22
1.275
8.5
V
mV
μF
FB Voltage Accuracy
FB Input Current
FB = COMP (MAX8508)
V FB = 1V (MAX8508)
0.7275
0.75
0.03
0.7725
0.175
V
μA
P-Channel On-Resistance
N-Channel On-Resistance
I LX = 180mA
I LX = 180mA
V BATT = 3.6V
V BATT = 2.6V
V BATT = 3.6V
V BATT = 2.6V
0.4
0.5
0.3
0.35
0.825
0.5
?
?
HP/Bypass P-Channel
On-Resistance
I OUT = 180mA, V BATT = 3.6V
0.075
0.110
?
2
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