参数资料
型号: MAX8520ETP+T
厂商: Maxim Integrated Products
文件页数: 2/18页
文件大小: 0K
描述: IC DRVR PWR TEC 20-TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
应用: 热电冷却器
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-WQFN 裸露焊盘
供应商设备封装: 20-TQFN-EP(5x5)
包装: 带卷 (TR)
Smallest TEC Power Drivers for Optical
Modules
ABSOLUTE MAXIMUM RATINGS
V DD to GND ..............................................................-0.3V to +6V
SHDN , MAXV, MAXIP, MAXIN,
CTLI to GND .........................................................-0.3V to +6V
COMP, FREQ, OS1, OS2, CS, REF,
ITEC to GND...........................................-0.3V to (V DD + 0.3V)
PVDD1, PVDD2 to GND .............................-0.3V to (V DD + 0.3V)
PVDD1, PVDD2 to V DD ..........................................-0.3V to +0.3V
PGND1, PGND2 to GND .......................................-0.3V to +0.3V
COMP, REF, ITEC short to GND....................................Indefinite
LX Current (Note 1) ........................................±2.25A LX Current
Continuous Power Dissipation (T A = +70°C)
6 x 6 UCSP (derate 22mW/°C above +70°C) ...............1.75W
20-Pin 5mm x 5mm x 0.9mm TQFN (derate 20.8mW/°C
above +70°C) (Note 2)...................................................1.67W
36-Bump WLP (derate 22mW/°C above +70°C)............1.75W
Operating Temperature Range ...........................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
Lead(Pb)-Free (TQFN, WLP)........................................+260°C
Containing Lead (UCSP)............................................. +240°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: LX has internal clamp diodes to PGND and PVDD. Applications that forward bias these diodes should take care not to
exceed the IC’s package power dissipation limits.
Note 2: Solders underside metal slug to PCB ground plane.
PACKAGE THERMAL CHARACTERISTICS (Note 3)
20 TQFN
Junction-to-Ambient Thermal Resistance ( θ JA )...............30°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................2°C/W
36 WLP
Junction-to-Ambient Thermal Resistance ( θ JA )..................38°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................4°C/W
6x6 UCSP
Junction-to-Ambient Thermal Resistance ( θ JA )................65.5°C/W
Junction-to-Case Thermal Resistance ( θ JC ).......................0°C/W
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = V PVDD1 = V PVDD2 = V SHDN = 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T A = 0°C to +85°C , unless otherwise noted. Typical values at T A = +25°C.)
PARAMETER
Input Supply Range
SYMBOL
V DD
CONDITIONS
MIN
3.0
TYP
MAX
5.5
UNITS
V
Maximum TEC Current
± 1.5
A
Reference Voltage
Reference Load Regulation
V REF
? V REF
V DD = 3V to 5.5V, I REF = 150μA
V DD = 3V to 5V, I REF = 10μA to 1mA
1.485
1.500
1.2
1.515
5.0
V
mV
MAXIP/MAXIN Threshold
Accuracy
V DD = 5V
V DD = 3V
V MAXI_ = V REF
V MAXI_ = V REF /3
V MAXI_ = V REF
V MAXI_ = V REF /3
140
40
143
45
150
50
150
50
160
60
155
55
mV
nFET On-Resistance
pFET On-Resistance
nFET Leakage
pFET Leakage
R DS(ON-N)
R DS(ON-P)
I LEAK(N)
I LEAK(P)
V DD = 5V, I = 0.2A
V DD = 3V, I = 0.2A
V DD = 5V, I = 0.2A
V DD = 3V, I = 0.2A
V LX = V DD = 5V, T A = +25 ° C
V LX = V DD = 5V T A = +85 ° C
V LX = 0V, T A = +25 ° C
V LX = 0V, T A = +85 ° C
0.09
0.11
0.14
0.17
0.03
0.3
0.03
0.3
0.14
0.16
0.23
0.30
4.00
4.00
?
?
μA
μA
2
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