参数资料
型号: MAX852ESA+T
厂商: Maxim Integrated Products
文件页数: 7/8页
文件大小: 0K
描述: IC REG SWITCHED CAP INV 8SOIC
标准包装: 2,500
类型: 切换式电容器(充电泵),反相
输出类型: 两者兼有
输出数: 1
输出电压: -4.1V,-0.5 V ~ -9 V
输入电压: 4.5 V ~ 10 V
频率 - 开关: 100kHz
电流 - 输出: 5mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
供应商设备封装: 8-SOIC
Low-Noise, Regulated, Negative
Charge-Pump Power Supplies for GaAsFET Bias
__________Applications Information
V IN
Setting the Output Voltage
For the MAX850–MAX852, select either a fixed or an
adjustable output voltage. Connect FB directly to GND to
select the fixed -4.1V output (Figure 2a). To select an alter-
C1
1 μ F
C1+
IN
C3
1 μ F
V OUT = -0.5V to -9V @ 5mA
(
)
V OUT = -1.28 ? 1 +
R 1 ?
nate output voltage, connect FB to the midpoint of a resis-
tor voltage divider from OUT to GND (Figure 2b). V IN must
be 1.0V above the absolute value of V OUT to allow proper
regulation. The output voltage is calculated from the formu-
la below. Choose R2 to be between 100k ? to 400k ? .
?
R 2 ?
?
?
C2
1 μ F
C1- MAX853
NEGOUT
SHDN
GND
OUT
CONT
R2
100k
R1
100k
C4
10 μ F
V CTRL (0V TO 10V)
V IN
Figure 2c. MAX853 Standard Application Circuit
IN
C3
1 μ F
For the MAX853, set the output voltage, VOUT, by con-
MAX851
? R1 ?
C1
1 μ F
C2
1 μ F
C1+
MAX850
C1-
MAX852
NEGOUT
OUT
V OUT = -4.1V
(V GG of GaAsFET)
C4
10 μ F
necting a resistor voltage divider between OUT and a
positive control voltage, V CTRL (Figure 2c.)
? R2 ?
V OUT = - V CTRL ? ?
Shutdown
The MAX850–MAX853 feature a shutdown mode that
*MAX850: SHDN
MAX851: SHDN
MAX852: OSC
SHDN*
SHDN
OSC
GND
FB
reduces the supply current to 1μA max over temperature
(5μA max for the MAX851). The MAX850 and MAX853 have
an active-low TTL logic level SHDN input, whereas the
MAX851 has an active-high SHDN input. To shut down the
MAX852, set the OCSC input to a logic-low level. The device
is powered up by the resumption of the clock signal.
Figure 2a. MAX850/MAX851/MAX852 Standard Application Circuit
V IN
Capacitors
Use capacitors with low effective series resistance (ESR) to
maintain a low dropout voltage (V IN - | V OUT | ). The overall
MAX851
(
C1
1 μ F
C2
1 μ F
IN
C1+
MAX850
C1-
MAX852
NEGOUT
OUT
C3
1 μ F
V OUT = (-1.28V) 1+ R2
R1
C4
10 μ F
R2
100k
)
dropout voltage is a function of the charge pump’s output
resistance and the voltage drop across the linear regulator
(N-channel pass transistor). At the 100kHz switching fre-
quency, the charge-pump output resistance is a function of
C1 and C2’s ESR. Therefore, minimizing the ESR of the
charge-pump capacitors minimizes the dropout voltage.
1μF, 0.8 ? ESR capacitors are recommended for C1, C2,
and C3. C4 should be 10μF, 0.2 ? ESR. All capacitors
SHDN*
should be either surface-mount chip tantalum or chip
SHDN
OSC
GND
FB
R1
100k
ceramic types. External capacitor values may be adjusted to
optimize size and cost.
*MAX850: SHDN
MAX851: SHDN
MAX852: OSC
Figure 2b. MAX850/MAX851/MAX852 Adjustable Configuration
Switching-Frequency Control
Use the MAX852 to minimize system interference caused by
conflicting clock frequencies. An external oscillator can set
the charge-pump frequency and reduce clock frequency
_______________________________________________________________________________________
7
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