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| 型号： | MAX8535EUA+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR ORING MOSFET 8-MSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 网络/电信电源，整流器 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 关闭： | 200ns |
| 电源电压： | 8 V ~ 14 V |
| 电流 - 电源： | 2mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-uMAX |
| 包装： | 带卷 (TR) |
ORing MOSFET Controllers with Fastest
Fault Isolation for Redundant Power Supplies
R 3 = R 4 ? UVLO - 1 ?
R 5 = R 6 ? OVLO - 1 ?
Normally, the external MOSFET’s gate capacitance is
sufficient to serve as a reservoir capacitor. If the
MOSFETs are located at a significant distance from the
MAX8535/MAX8536/MAX8585, place a local bypass
capacitor (0.01μF, typ) across GATE and GND. For
slower turn-on times, add a small capacitor between
GATE and GND and a series resistor between GATE
and the gate of the MOSFETs.
Set the UVP Fault Threshold
To set the undervoltage lockout threshold, use a resistor-
divider connected between V CC and GND, with the
center node of the divider connected to UVP. For
example, use a 10k ? resistor (R4 in Figure 4) from UVP
to GND and calculate the other resistor (R3) using:
? V ?
? V UVP ?
where V UVLO is the desired undervoltage lockout volt-
age and V UVP is the UVP reference threshold specified
in the Electrical Characteristics (1.25V, typ). To defeat
the UVP, leave UVP unconnected.
Set the OVP Fault Threshold
To set the OVP threshold, use a resistor-divider con-
nected between CS and GND, with the center node of
the divider connected to OVP. For example, use a
10k ? resistor (R6 in Figure 4) from OVP to GND and
calculate the other resistor, R5, using:
? V ?
? V OVP ?
where V OVLO is the desired overvoltage lockout voltage
and V OVP is the OVP reference threshold specified in
the Electrical Characteristics (1.25V, typ). To defeat the
OVP, connect the OVP input to GND.
MOSFET Selection
The MAX8535/MAX8536/MAX8585 drive n-channel
MOSFETs. The most important feature of the MOSFETs
is R DS(ON) . As load current flows through the external
MOSFET, a voltage (V DS ) is generated from drain-to-
source due to the MOSFET’s on-resistance, R DS(ON) .
The MAX8535/MAX8536/MAX8585 monitor V DS of the
MOSFETs at all times. The MAX8535/MAX8536/
MAX8585 determine the state of the monitored power
supply by measuring the voltage drop across the exter-
nal MOSFETs. With two external MOSFETs, the equa-
tion becomes:
V DSTOTAL = R DS(ON)1 x I LOAD + R DS(ON)2 x I LOAD
Selecting a MOSFET with a low R DS(ON) allows more
current to flow through the MOSFETs before the
MAX8535/MAX8536/MAX8585 detect reverse-current
(I REVERSE ) and forward-current (I FORWARD ) conditions.
Using a Single MOSFET
Single MOSFETs can be used if the OVP function is not
needed. Connect the source of the MOSFET to V CC
and the drain of the MOSFET to CS.
Layout Guidelines
Keep all traces as short as possible and maximize the
high-current trace width to reduce the effect of undesir-
able parasitic inductance. The MOSFET generates a
fair amount of heat because of the high currents
involved. In order to dissipate the heat generated by
the MOSFET, make the power traces very wide with a
large amount of copper area, and place the MAX8535/
MAX8536/MAX8585 as close as possible to the drain of
the external MOSFET. A more efficient way to achieve
good power dissipation on a surface-mount package is
to lay out two copper pads directly under the MOSFET
package on both sides of the board. Connect the two
pads to the ground plane through vias and use
enlarged copper mounting pads on the topside of the
board. Use a ground plane to minimize impedance and
inductance. Refer to the MAX8535 Evaluation Kit data
sheet for an example of a PC board layout.
In addition to the usual high-power considerations,
bypassing prevent false faults by:
1) Bypass V CC with a 0.1μF capacitor to ground and
bypassing CS with a 1nF capacitor to ground.
2) Making the traces connecting UVP and OVP as
short as possible.
3) Kelvin connecting V CC and CS to the external
MOSFET.
14
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相关代理商/技术参数 |
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| MAX8535EVKIT | 功能描述:功率驱动器IC Evaluation Kit for the MAX8535 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8536EUA | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8536EUA+ | 功能描述:功率驱动器IC ORing MOSFET Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8536EUA+T | 功能描述:功率驱动器IC ORing MOSFET Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8536EUA-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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