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参数资料
| 型号： | MAX8555AEUB+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 12/17页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR MOSFET ORING 10-UMAX |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 电信电源，整流器 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 关闭： | 100ns |
| 电源电压： | 8 V ~ 13.25 V |
| 电流 - 电源： | 2mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-µMAX |
| 包装： | 带卷 (TR) |
Low-Cost, High-Reliability, 0.5V to 3.3V ORing
MOSFET Controllers
Table 1. Fault Modes
FAULT MODE
VL UVLO
UVP
Undervoltage Protection
OVP
Overvoltage Protection
Reverse-Current Protection
V DD Internal Overvoltage Protection
CONDITIONS
VL < VL OK
V UVP < 0.4V
V OVP > 0.5V
V CS+ > V CS- + 0.01V
V CS+ < V CS- - 0.04V (0.02V for MAX8555A) and
GATE is on for > 2048 charge-pump cycles
V DD > 14.5V
GATE
LOW
LOW
LOW
LOW
LOW
FAULT
High Impedance
LOW
LOW
LOW
LOW
LATCHING
NO
NO
YES
YES
NO
Reverse-Current Fault
R5
2.87k ?
SYSTEM BUS
The MAX8555/MAX8555A provide a reverse-current
fault-protection feature that turns off the oring MOSFET
when a reverse-current fault condition is detected.
Once a reverse-current fault condition is detected, the
R2A
47k ?
R6
1k ?
R2A
47k ?
MAX8555/MAX8555A discharge GATE to GND and
latch FAULT low. Toggle V DD , VL, or TIMER to reset the
IC. The reverse-current-protection feature is blanked for
FAULT
R2B
6.04k ?
150pF
150pF
R2B
6.04k ?
FAULT
2048 charge-pump cycles at startup.
Selecting the TIMER Resistor
Connect a resistor from TIMER to GND to set the inter-
nal charge pump’s frequency of operation. Determine
the TIMER resistor with the following equation:
OVP OVP
Figure 2. OVP Connection when Multiple MAX8555s Are Used
R TIMER =
1 . 25 V
f
100 μ A ?
5 kHz / μ A
(defined as V CS+ > V CS- + 0.01V), the MAX8555/
MAX8555A discharge GATE to GND and FAULT is
latched low. If the I FORWARD condition is not detected,
OVP is disabled. In redundant systems, when one input
supply approaches its OVP threshold, some of the
other input supplies may be pulled up with it, thereby
tripping those OVP comparators with a slightly lower
set point. The I FORWARD condition for the pulled-up
supplies may not be detected until the first supply is
shut down. An alternate application schematic for
FAULT and OVP is shown in Figure 2. The FAULT
output of the first channel, which has both OVP and
I FORWARD conditions, temporarily reduces the common
OVP signal by 125mV. This ensures that only the input
supply, which is causing the overvoltage condition, is
turned off in a redundant power-system application.
Exceeding the OVP threshold causes the MAX8555/
MAX8555A to be latched off. Toggle V DD or TIMER to
reset the IC. Connect OVP to GND to disable the over-
voltage-protection feature.
Drive TIMER above 1.5V for the maximum charge-
pump frequency (550kHz). Drive TIMER below 0.5V to
disable the charge pump and shut down the MAX8555/
MAX8555A.
Selecting the GATE Capacitor and
GATE Resistor
The charge pump uses an internal monolithic transfer
capacitor to charge the external MOSFET gates.
Normally, the external MOSFET’s gate capacitance is
sufficient to serve as a reservoir capacitor. To slow down
turn-on times further, add a small capacitor between
GATE and GND. Adding a small resistor between GATE
and the gate of the Oring MOSFET reduces the high-fre-
quency ringing due to gate trace inductance. However,
the resistor increases the turn-off time.
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8555AEVKIT | 功能描述:电源管理IC开发工具 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX8555ETB+ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| MAX8555ETB+T | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| MAX8555ETB-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8555EUB | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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