参数资料
型号: MAX8555EUB+
厂商: Maxim Integrated
文件页数: 8/17页
文件大小: 0K
描述: IC CNTRLR MOSFET ORING 10-UMAX
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
应用: 电信电源,整流器
FET 型: N 沟道
输出数: 1
内部开关:
延迟时间 - 关闭: 100ns
电源电压: 8 V ~ 13.25 V
电流 - 电源: 2mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-µMAX
包装: 管件
Low-Cost, High-Reliability, 0.5V to 3.3V ORing
MOSFET Controllers
Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
GATE
GND
VL
V DD
UVP
TIMER
FAULT
OVP
CS-
CS+
FUNCTION
Gate-Drive Output. Nominal GATE load is a 0.01μF capacitor to ground. Gate is discharged to GND in
shutdown.
Ground
Low-Voltage Optional Input Power. Leave disconnected when V DD = 8V to 13.25V, or connect V DD to VL
when V DD = 3V to 5.5V. Bypass VL to GND with a 0.01μF capacitor.
Power-Supply Input. Connect to an 8V to 13.25V supply or connect to VL when using a 3V to 5.5V supply.
Bypass V DD with a 0.01μF capacitor to ground.
Undervoltage-Protection Input. Connect UVP to the center of a resistor-divider from CS+ to GND. Connect
UVP to VL to disable the undervoltage protection.
Timer Input. Connect a resistor from TIMER to GND to select the charge-pump operating frequency. Drive
TIMER low (< 0.5V) to disable the gate drive. Drive TIMER high (above 1.5V) for charge-pump operation
at 550kHz.
Open-Drain Fault Output. FAULT is high impedance during normal operation and is pulled to GND when a
fault condition occurs. Connect a pullup resistor of 10k ? or higher value (50k ? typ) to a voltage rail of 5.5V
or lower.
Overvoltage-Protection Input. Connect OVP to the center of a resistor-divider from the output bus to GND.
Connect OVP to GND to disable the overvoltage protection.
Current-Sensing Input. Connect CS- to the positive side of the system bus. Bypass with a 1000pF capacitor
to GND.
Current-Sensing Input. Connect CS+ to the positive side of the input power. Bypass with a 1000pF capacitor
to GND.
8
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MAX8555EUB+ 功能描述:功率驱动器IC .5-3.3V ORing MOSFET Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX8555EUB+T 功能描述:功率驱动器IC .5-3.3V ORing MOSFET Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX8555EUB-T 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX8556ETE 功能描述:低压差稳压器 - LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
MAX8556ETE/GG8 功能描述:低压差稳压器 - LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20