参数资料
型号: MAX8661ETL+T
厂商: Maxim Integrated Products
文件页数: 4/44页
文件大小: 0K
描述: IC POWER MANAGE XSCALE 40-TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
应用: 处理器
电源电压: 2.6 V ~ 6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 40-WFQFN 裸露焊盘
供应商设备封装: 40-TQFN-EP(5x5)
包装: 带卷 (TR)
High-Efficiency, Low-I Q , PMICs with Dynamic
Voltage Management for Mobile Applications
ABSOLUTE MAXIMUM RATINGS
IN, IN5, IN6, IN67, EN2, EN34, EN5, LBO , RSO , MR , SET1,
SET2, V1, V2, V3, V4, SCL, SDA,
SRAD to AGND..................................................-0.3V to +7.5V
LBF, LBR, EN1, RAMP to AGND .................-0.3V to (V IN + 0.3V)
V8 to AGND................................................-0.3V to (V IN8 + 0.3V)
V5 to AGND................................................-0.3V to (V IN5 + 0.3V)
V6, V7 to AGND........................................-0.3V to (V IN67 + 0.3V)
PV1 to PG1 ............................................................-0.3V to +7.5V
PV2 to PG2 ............................................................-0.3V to +7.5V
PV3 to PG3 ............................................................-0.3V to +7.5V
PV4 to PG4 ............................................................-0.3V to +7.5V
PV, PV1, PV2, PV3, PV4, IN8 to IN ........................-0.3V to +0.3V
LX1 Continuous RMS Current (Note 1) .................................2.3A
LX2 Continuous RMS Current (Note 1) .................................2.0A
LX3 Continuous RMS Current (Note 1) .................................2.6A
LX4 Continuous RMS Current (Note 1) .................................1.0A
PG1, PG2, PG3, PG4, EP to AGND.......................-0.6V to +0.6V
GND to AGND ......................................................-0.3V to +0.3V
All REGx Output Short-Circuit Duration......................Continuous
Continuous Power Dissipation (T A = +70°C)
40-Pin Thin QFN (derate 35.7mW/°C above +70°C).....2857mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Note 1: LX_ has internal clamp diodes to PG_ and PV_. Applications that forward bias these diodes must take care not to exceed
the IC’s package power-dissipation limits.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = V IN5 = V IN67 = V IN8 = 3.6V, Figure 3, T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.) (Note 2)
PARAMETER
PV1, PV2, PV3, PV4, IN, IN8
Supply Voltage Range
IN Undervoltage-Lockout
Threshold
IN Overvoltage-Lockout
Threshold
SYMBOL
V IN
V UVLO
V OVLO
CONDITIONS
PV1, PV2, PV3, PV4, IN, and IN8 must be
connected together externally
V IN rising
V IN falling
V IN rising
V IN falling
MIN
2.6
2.250
2.200
6.20
6.00
TYP
2.400
2.350
6.35
6.15
MAX
6.0
2.550
2.525
6.50
6.30
UNITS
V
V
V
Only V8 on (deep-sleep
power mode)
V1, V2, and V8 on;
V1 and V2 in normal (skip)
operating mode
V1, V2, V5, and V8 on
20
50
I IN + I PV1 +
No load;
SDA = SCL = V8
(sleep power mode);
V1 and V2 in normal (skip)
operating mode
90
Input Current
I PV2 + I PV3 +
I PV4 + I IN5 +
I IN67 + I IN8
V1, V2, V3, V4, V5, and V8 on
(run power mode);
V1, V2, V3, and V4 in normal
140
μA
(skip) operating mode
V1, V2, V3, V4, V5, V6, V7,
4
and V8 (all on);
V1, V2, V3, and V4 in normal
(skip) operating mode
Undervoltage lockout, V IN = 2.2V
Overvoltage lockout, V IN = 6.5V
250
1.5
25
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