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参数资料
| 型号： | MAX8702ETP+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSFET DUAL 20-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 75 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 28 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 供应商设备封装： | 20-TQFN-EP（4x4） |
| 包装： | 管件 |
Dual-Phase MOSFET Drivers
with Temperature Sensor
the current limit and cause the fault latch to trip. The
MOSFETs must have a good-sized heatsink to handle
the overload power dissipation. The heat sink can be a
large copper field on the PC board or an externally
mounted device.
The Schottky diode only conducts during the dead time
when both the high-side and low-side MOSFETs are off.
Choose a Schottky diode with a forward voltage low
enough to prevent the low-side MOSFET body diode
from turning on during the dead time, and a peak cur-
rent rating higher than the peak inductor current. The
Schottky diode must be rated to handle the average
power dissipation per switching cycle. This diode is
optional and can be removed if efficiency is not critical.
IC Power Dissipation and
Thermal Considerations
Power dissipation in the IC package comes mainly from
driving the MOSFETs. Therefore, it is a function of both
switching frequency and the total gate charge of the
selected MOSFETs. The total power dissipation when
2) Minimize the high-current loops from the input capaci-
tor, upper-switching MOSFET, and low-side MOSFET
back to the input capacitor negative terminal.
3) Provide enough copper area at and around the
switching MOSFETs and inductors to aid in thermal
dissipation.
4) Connect the PGND1 and PGND2 pins as close as
possible to the source of the low-side MOSFETs.
5) Keep LX traces away from sensitive analog compo-
nents and nodes. Place the IC and analog compo-
nents on the opposite side of the board from the
power-switching node if possible.
6) Use two or more vias for DL and DH traces when
changing layers to reduce via inductance.
Figure 5 shows a PC board layout example.
both drivers are switching is given by:
PD(IC) = I BIAS x 5V
where I BIAS is the bias current of the 5V supply calcu-
lated in the 5V Bias Supply (V DD and V CC ) section .
The rise in die temperature due to self-heating is given
by the following formula:
? T J = PD(IC) x θ JA
where PD(IC) is the power dissipated by the device, and
θ JA is the package ’ s thermal resistance. The typical ther-
mal resistance is 59.3 ° C/W for the 4mm x 4mm thin QFN
package. For example, if the MAX8702 dissipates
500mW of power within the IC, this corresponds to a 30 ° C
shift in the die temperature in the thin QFN package.
PC Board Layout Considerations
The MAX8702/MAX8703 MOSFET drivers source and
sink large currents to drive MOSFETs at high switching
speeds. The high di/dt can cause unacceptable ringing
if the trace lengths and impedances are not well con-
trolled. The following PC board layout guidelines are
recommended when designing with the device:
1) Place V CC and V DD decoupling capacitors as close
VIA TO POWER
GROUND
USE DOUBLE
VIAS FOR DL_
INDUCTOR
C IN
C IN
INPUT
POWER
GROUND
OUTPUT
CONNECT AGND AND
PGND_ BENEATH THE
CONTROLLER AT ONE
POINT ONLY AS SHOWN
C IN
C IN
INDUCTOR
to their respective pins as possible.
Figure 5. PC Board Layout Example
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8702ETP+ | 功能描述:功率驱动器IC Dual-Phase MOSFET Driver w/Temp Sensor RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8702ETP+T | 功能描述:功率驱动器IC Dual-Phase MOSFET Driver w/Temp Sensor RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8702ETP-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP+T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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