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参数资料
| 型号： | MAX8794ETB/V+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | IC REG DDR 3A LV 10TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 转换器，DDR |
| 输入电压： | 1.1 V ~ 3.6 V |
| 输出数： | 1 |
| 输出电压： | 0.5 V ~ 1.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
Low-Voltage DDR Linear Regulator
ABSOLUTE MAXIMUM RATINGS
IN to PGND............................................................-0.3V to +4.3V
OUT to PGND ..............................................-0.3V to (V IN + 0.3V)
OUTS to AGND ............................................-0.3V to (V IN + 0.3V)
V CC to AGND.........................................................-0.3V to +4.3V
REFIN, REFOUT, SHDN , PGOOD to AGND...-0.3V to (V CC + 0.3V)
PGND to AGND .....................................................-0.3V to +0.3V
REFOUT Short Circuit to AGND .................................Continuous
OUT Continuous RMS Current
100s ................................................................................ ± 1.6A
Continuous Power Dissipation (T A = +70°C)
10-Pin 3mm x 3mm TDFN
(derated 24.4mW/ ° C above +70°C)...........................1951mW
Operating Temperature Range
MAX8794ETB...................................................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
1s ....................................................................................±2.5A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = 1.8V, V CC = 3.3V, V REFIN = V OUTS = 1.25V, SHDN = V CC , circuit of Figure 1, T A = -40 ° C to +85 ° C, unless otherwise noted.
Typical values are at T A = +25 ° C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Voltage Range
Quiescent Supply Current (V CC )
Shutdown Supply Current (V CC )
Quiescent Supply Current (V IN )
Shutdown Supply Current (V IN )
V IN
V CC
I CC
I CC(SHDN)
I IN
I IN(SHDN)
Power input
Bias supply
Load = 0, V REFIN > 0.45V
SHDN = AGND, V REFIN > 0.45V
SHDN = AGND, REFIN = AGND
Load = 0
SHDN = AGND
1.1
2.7
0.7
350
50
0.4
0.1
3.6
3.6
1.3
600
100
10
10
V
mA
μA
mA
μA
Feedback-Voltage Error
V OUTS
REFIN to OUTS,
I OUT = ± 200mA
T A = +25°C
T A = -40°C to +85°C
-4
-6
0
+4
+6
mV
Load-Regulation Error
Line-Regulation Error
OUTS Input Bias Current
I OUTS
-1A ≤ I OUT ≤ +1A
1.4V ≤ V IN ≤ 3.3V, I OUT = ± 100mA
-15
-1
1
+15
+1
mV
mV
μA
OUTPUT
Output Adjust Range
0.5
1.5
V
OUT On-Resistance
Output Current Slew Rate
High-side MOSFET (source) (I OUT = 0.1A)
Low-side MOSFET (sink) (I OUT = -0.1A)
C OUT = 100μF, I OUT = 0.1A to 2A
0.10
0.10
3
0.169
0.20
Ω
A/μs
OUT Power-Supply Rejection
Ratio
PSRR
10Hz < f < 10kHz, I OUT = 200mA,
C OUT = 100μF
80
dB
OUT to OUTS Resistance
Discharge MOSFET On-
Resistance
R OUTS
R DISCHARGE SHDN = AGND
12
8
k Ω
Ω
2
_______________________________________________________________________________________
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